LH5116-10 Sharp Microelectronics, LH5116-10 Datasheet - Page 4

• Manufacturer Part Number: LH5116-10
• Description: IC SRAM 16KBIT 100NS 24DIP
• Manufacturer: Sharp Microelectronics

Specifications of LH5116-10

• Rohs Status: RoHS non-compliant
• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 16K (2K x 8)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 24-DIP (0.600", 15.24mm)
• Other names: 425-1828-5

LH5116/H
(2) WRITE CYCLE
NOTES:
1. T
2. Active output to high-impedance and high-impedance to output active tests specified for a 200 mV transition
AC TEST CONDITIONS
NOTE:
1. Includes scope and jig capacitance.
DATA RETENTION CHARACTERISTICS
NOTES:
1. T
2. T
3. t
CAPACITANCE
NOTE:
1. This parameter is sampled and not production tested.
4
Write cycle time
Chip enable to end of write
Address valid time
Address setup time
Write pulse width
Write recovery time
Output active from end of write
WE Low to output in High-Z
Data valid to end of write
Data hold time
Output enable to output in High-Z
Output active from end of write
Input voltage amplitude
Input rise/fall time
Timing reference level
Output load condition
Data retention voltage
Data retention current
Chip disable to data
retention
Recovery time
Input capacitance
Input/output capacitance
from steady state levels into the test load.
RC
A
A
A
= 0 to +70 C (LH5116/D/NA), T
= 0 to +70 C (LH5116/D/NA), T
= 25 C
= Read cycle time
PARAMETER
PARAMETER
PARAMETER
PARAMETER
1
(f = 1 MHz, T
1
(V
SYMBOL
V
I
CCDR
t
CCDR
CDR
CC
t
R
SYMBOL
A
A
= 5 V 10%)
1TTL + C
C
C
= -40 to +85 C (LH5116H/HD/HN)
= -40 to +85 C (LH5116H/HD/HN)
I/O
IN
0.8 V to 2.2 V
CE
CE
MODE
A
SYMBOL
10 ns
1.5 V
V
t
t
= 25 C)
t
t
t
t
L
CONDITIONS
t
t
t
WHZ
t
t
OHZ
t
WC
CW
WR
OW
DW
OW
CCDR
AW
WP
DH
AS
(100 pF)
V
V
CONDITIONS
CCDR
CCRC
V
V
I/O
IN
= 2.0 V
= 0 V
= 0 V
- 0.2 V,
- 0.2 V
1
MIN.
100
80
80
60
10
10
30
10
10
0
0
0
NOTE
1
MIN.
MIN.
2.0
t
RC
0
TYP.
TYP.
TYP.
MAX.
30
40
CMOS 16K (2K
MAX.
MAX.
10
5.5
1.0
0.2
7
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNIT
UNIT
pF
pF
ns
ns
V
NOTE
A
2
2
2
2
8) Static RAM
NOTE
2
3