M25P10-AVMN6T STMicroelectronics, M25P10-AVMN6T Datasheet - Page 11
![IC FLASH 1MBIT 40MHZ 8SOIC](/photos/1/38/13851/497-8-soic_sml.jpg)
M25P10-AVMN6T
Manufacturer Part Number
M25P10-AVMN6T
Description
IC FLASH 1MBIT 40MHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheet
1.M25P10-AVMP6T.pdf
(51 pages)
Specifications of M25P10-AVMN6T
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
1M (128K x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1622-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25P10-AVMN6T
Manufacturer:
NVIDIA
Quantity:
12
Part Number:
M25P10-AVMN6T
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
M25P10-AVMN6TP
Manufacturer:
MICRON
Quantity:
11 200
Company:
Part Number:
M25P10-AVMN6TP
Manufacturer:
Numonyx
Quantity:
47 500
Company:
Part Number:
M25P10-AVMN6TP
Manufacturer:
ST
Quantity:
144
Company:
Part Number:
M25P10-AVMN6TP
Manufacturer:
MICRON85
Quantity:
4 940
Part Number:
M25P10-AVMN6TP
Manufacturer:
ST
Quantity:
20 000
M25P10-A
4
4.1
4.2
4.3
4.4
Operating features
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one
byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This is
followed by the internal Program cycle (of duration t
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be
programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive
addresses on the same page of memory.
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few bytes (see
and
Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be
achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the
entire memory, using the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of
duration t
The Erase instruction must be preceded by a Write Enable (WREN) instruction.
Polling during a Write, Program or Erase cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase
(SE or BE) can be achieved by not waiting for the worst case delay (t
Write In Progress (WIP) bit is provided in the Status Register so that the application program
can monitor its value, polling it to establish when the previous Write cycle, Program cycle or
Erase cycle is complete.
Active Power, Standby Power and Deep Power-down modes
When Chip Select (S) is Low, the device is selected, and in the Active Power mode.
When Chip Select (S) is High, the device is deselected, but could remain in the Active Power
mode until all internal cycles have completed (Program, Erase, Write Status Register). The
device then goes in to the Standby Power mode. The device consumption drops to I
The Deep Power-down mode is entered when the specific instruction (the Deep Power-
down (DP) instruction) is executed. The device consumption drops further to I
device remains in this mode until another specific instruction (the Release from Deep
Power-down and Read Electronic Signature (RES) instruction) is executed.
While in the Deep Power-down mode, the device ignores all write, program and erase
instructions (see
mechanism, when the device is not in active use, to protect the device from inadvertent
write, program or erase instructions.
Table 16: Instruction times (device grade
SE
or t
BE
Deep Power-down
).
(DP)). This can be used as an extra software protection
6)).
PP
).
W
Page Program (PP)
, t
Operating features
PP
, t
SE
CC2
, or t
. The
BE
CC1
). The
11/51
.