M25P40-VMN6T NUMONYX, M25P40-VMN6T Datasheet - Page 35

no-image

M25P40-VMN6T

Manufacturer Part Number
M25P40-VMN6T
Description
IC FLASH 4MBIT 50MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P40-VMN6T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1624-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P40-VMN6T
Manufacturer:
ST
0
Part Number:
M25P40-VMN6TG
Manufacturer:
ST
0
Part Number:
M25P40-VMN6TP
Manufacturer:
MICRON
Quantity:
19 000
Part Number:
M25P40-VMN6TP
Manufacturer:
ST
Quantity:
6
Part Number:
M25P40-VMN6TP
Manufacturer:
ST
Quantity:
1 000
Part Number:
M25P40-VMN6TP
Manufacturer:
ST
0
Part Number:
M25P40-VMN6TP
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
M25P40-VMN6TP(V6)
Manufacturer:
ST
0
Part Number:
M25P40-VMN6TPB
Manufacturer:
MICRON
Quantity:
21 000
Part Number:
M25P40-VMN6TPB
Manufacturer:
MICRON
Quantity:
11 200
Part Number:
M25P40-VMN6TPB
Manufacturer:
Numonyx
Quantity:
22 500
Part Number:
M25P40-VMN6TPB
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
M25P40-VMN6TPB
0
Company:
Part Number:
M25P40-VMN6TPB
Quantity:
12 500
M25P40
Figure 20. Power-up Timing
Table 8.
1. These parameters are characterized only.
V CC (max)
Symbol
V CC (min)
t
t
PUW
V
VSL
WI
V WI
(1)
(1)
(1)
V CC
V
Time delay to Write instruction
Write Inhibit Voltage (Device grade 6)
Write Inhibit Voltage (Device grade 3)
Power-Up Timing and VWI Threshold
Reset State
CC
Device
of the
(min) to S low
Program, Erase and Write Commands are Rejected by the Device
Chip Selection Not Allowed
Parameter
tPUW
tVSL
Read Access allowed
Power-up and Power-down
Min.
10
1
1
1
Device fully
accessible
Max.
AI04009C
2.2
10
2
time
Unit
35/51
ms
µs
V
V

Related parts for M25P40-VMN6T