M25P40-VMN6T NUMONYX, M25P40-VMN6T Datasheet - Page 39

• Manufacturer Part Number: M25P40-VMN6T
• Description: IC FLASH 4MBIT 50MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P40-VMN6T

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-1624-2

M25P40
Table 14.
1. This is preliminary data.
Table 15.
1. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are
Symbol
Symbol
t
I
I
I
I
I
I
I
V
V
PP
V
I
CC1
CC2
CC3
CC4
CC5
CC6
CC7
V
obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1 n
256)
I
t
t
LO
t
OH
LI
OL
SE
BE
IH
W
IL
(1)
Input Leakage Current
Output Leakage Current
Standby Current
Deep Power-down Current
Operating Current (READ)
Operating Current (PP)
Operating Current (WRSR)
Operating Current (SE)
Operating Current (BE)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
DC Characteristics (Device Grade 3)
Instruction Times (Device Grade 6)
Alt.
Parameter
Write Status Register Cycle Time
Page Program Cycle Time (256 Bytes)
Page Program Cycle Time (n Bytes)
Sector Erase Cycle Time
Bulk Erase Cycle Time
Test conditions specified in
Parameter
C = 0.1V
C = 0.1V
Test Condition (in addition to
S = V
S = V
those in
CC
CC
CC
CC
I
OH
I
OL
, V
, V
Q = open
Q = open
S = V
S = V
S = V
S = V
/ 0.9.V
/ 0.9.V
Table 10
= –100 A
= 1.6mA
IN
IN
Table
= V
= V
CC
CC
CC
CC
CC
CC
SS
SS
at 25MHz,
at 20MHz,
10)
or V
or V
and
Min.
CC
CC
Table 17
DC and AC parameters
V
n*1/256
0.7V
Min
CC
– 0.5
Typ.
0.4+
1.4
4.5
5
1
–0.2
(1)
CC
V
Max.
0.3V
Max
CC
15
10
5
3
100
± 2
± 2
0.4
50
15
15
15
15
8
4
+0.4
CC
(1)
Unit
ms
ms
39/51
Unit
mA
mA
mA
mA
mA
mA
s
s
µA
µA
µA
µA
V
V
V
V