PSD813F1A-90MI STMicroelectronics, PSD813F1A-90MI Datasheet - Page 94
![IC FLASH 1MBIT 90NS 52QFP](/photos/7/25/72513/497-52-pqfp_series_sml.jpg)
PSD813F1A-90MI
Manufacturer Part Number
PSD813F1A-90MI
Description
IC FLASH 1MBIT 90NS 52QFP
Manufacturer
STMicroelectronics
Datasheet
1.PSD813F1A-90U.pdf
(111 pages)
Specifications of PSD813F1A-90MI
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
1M (128K x 8)
Speed
90ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
52-QFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1978
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PSD813F1A-90MI
Manufacturer:
STMicroelectronics
Quantity:
10 000
PSD813F1A
Table 60. Flash Program, WRITE and Erase Times (3V devices)
Note: 1. Programmed to all zero before erase.
Table 61. EEPROM WRITE Times (5V devices)
Note: 1. If the maximum time has elapsed between successive WRITE cycles to an EEPROM page, the transfer of this data to EEPROM
Table 62. EEPROM WRITE Times (3V devices)
Note: 1. If the maximum time has elapsed between successive WRITE cycles to an EEPROM page, the transfer of this data to EEPROM
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t
t
t
t
t
WHQV3
WHQV2
WHQV1
WHWLO
Q7VQV
Symbol
Symbol
Symbol
t
t
EEHWL
EEHWL
t
t
t
t
t
t
WCB
WCP
WCB
WCP
BLC
BLC
2. The polling status, DQ7, is valid t
2. These specifications are for writing a page to EEPROM cells.
2. These specifications are for writing a page to EEPROM cells.
cells will begin. Also, bytes cannot be written (loaded) to a page any faster than the indicated minimum type.
cells will begin. Also, bytes cannot be written (loaded) to a page any faster than the indicated minimum type.
Flash Program
Flash Bulk Erase
Flash Bulk Erase (not pre-programmed)
Sector Erase (pre-programmed)
Sector Erase (not pre-programmed)
Byte Program
Program / Erase Cycles (per Sector)
Sector Erase Time-Out
DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)
EEPROM Byte Load Cycle Timing (Note
EEPROM Byte Load Cycle Timing (Note
EEPROM Page Write Cycle Time (Note
EEPROM Page Write Cycle Time (Note
Program/Erase Cycles (Per Sector)
Program/Erase Cycles (Per Sector)
EEPROM Byte Write Cycle Time
EEPROM Byte Write Cycle Time
Write Protect After Power Up
Write Protect After Power Up
1
(pre-programmed)
Q7VQV
Parameter
Parameter
Parameter
time units before the data byte, DQ0-DQ7, is valid for reading.
2
2
1
1
)
)
)
)
2
10,000
10,000
100,000
Min
Min
0.2
0.2
Min.
Typ
Typ
Typ.
5
4
6
5
4
6
100
8.5
2.2
10
14
3
1
Max
Max
120
120
10
30
10
30
Max.
1200
30
30
30
cycles
cycles
cycles
Unit
Unit
Unit
ms
ms
ms
ms
ms
ms
µs
µs
µs
ns
µs
s
s
s
s
s