CY7C1352F-100AC Cypress Semiconductor Corp, CY7C1352F-100AC Datasheet

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CY7C1352F-100AC

Manufacturer Part Number
CY7C1352F-100AC
Description
IC SRAM 4.5MBIT 100MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1352F-100AC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
4.5M (256K x 18)
Speed
100MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1352F-100AC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1352F-100AC-ISB-PBE
Quantity:
23
Cypress Semiconductor Corporation
Document #: 38-05211 Rev. *C
Features
Note:
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
• Pin compatible and functionally equivalent to ZBT™
• Internally self-timed output buffer control to eliminate
• Byte Write capability
• 256K x 18 common I/O architecture
• Single 3.3V power supply
• 2.5V / 3.3V I/O Operation
• Fast clock-to-output times
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Asynchronous output enable (OE)
• JEDEC-standard 100 TQFP package
• Burst Capability—linear or interleaved burst order
• “ZZ” Sleep Mode Option and Stop Clock option
Logic Block Diagram
devices
the need to use OE
— 2.6 ns (for 250-MHz device)
— 2.6 ns (for 225-MHz device)
— 2.8 ns (for 200-MHz device)
— 3.5 ns (for 166-MHz device)
— 4.0 ns (for 133-MHz device)
— 4.5 ns (for 100-MHz device)
CEN
CLK
A0, A1, A
ADV/LD
MODE
BW
BW
ZZ
C
WE
CE1
CE2
CE3
OE
A
B
WRITE ADDRESS
REGISTER 1
REGISTER 0
ADDRESS
Control
READ LOGIC
Sleep
AND DATA COHERENCY
WRITE REGISTRY
CONTROL LOGIC
WRITE ADDRESS
ADV/LD
REGISTER 2
3901 North First Street
C
A1
A0
D1
D0
BURST
LOGIC
4-Mbit (256Kx18) Pipelined SRAM
Q1
Q0
A0'
A1'
Functional Description
The CY7C1352F is a 3.3V, 256K x 18 synchronous-pipelined
Burst SRAM designed specifically to support unlimited true
back-to-back Read/Write operations without the insertion of
wait states. The CY7C1352F is equipped with the advanced
No Bus Latency™ (NoBL™) logic required to enable consec-
utive Read/Write operations with data being transferred on
every clock cycle. This feature dramatically improves the
throughput of the SRAM, especially in systems that require
frequent Write/Read transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which, when deasserted, suspends operation and extends the
previous clock cycle. Maximum access delay from the clock
rise is 2.8 ns (200-MHz device)
Write operations are controlled by the two Byte Write Select
(BW
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
DRIVERS
WRITE
[A:B]
) and a Write Enable (WE) input. All writes are
with NoBL™ Architecture
MEMORY
REGISTER 1
San Jose
ARRAY
INPUT
E
,
M
E
N
E
A
P
S
S
S
CA 95134
[1]
O
U
T
P
U
T
R
E
G
T
E
R
E
S
S
I
REGISTER 0
INPUT
Revised April 16, 2004
D
A
T
A
T
E
E
R
N
G
S
1
I
, CE
CY7C1352F
E
2
O
U
U
U
T
P
T
B
F
F
E
R
S
, CE
E
408-943-2600
3
) and an
DQs
DQP
DQP
A
B

Related parts for CY7C1352F-100AC

CY7C1352F-100AC Summary of contents

Page 1

... Cypress Semiconductor Corporation Document #: 38-05211 Rev. *C 4-Mbit (256Kx18) Pipelined SRAM Functional Description The CY7C1352F is a 3.3V, 256K x 18 synchronous-pipelined Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1352F is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consec- utive Read/Write operations with data being transferred on every clock cycle ...

Page 2

... V 11 DDQ BYTE DDQ DQP DDQ Document #: 38-05211 Rev. *C 250 MHz 225 MHz 200 MHz 2.6 2.6 2.8 325 290 265 100-Pin TQFP CY7C1352F CY7C1352F 166 MHz 133 MHz 100 MHz 3.5 4.0 4.5 240 225 205 DDQ DQP DDQ DDQ ...

Page 3

... Mode Input. Selects the burst order of the device. When tied to Gnd selects linear burst sequence. When tied to V selects interleaved burst sequence. Power supply inputs to the core of the device. Power supply for the I/O circuitry. CY7C1352F Description are fed to the two-bit burst counter. [1:0] to select/deselect the device. ...

Page 4

... Burst Read Accesses The CY7C1352F has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Reads without reasserting the address inputs. ADV/LD must be driven LOW in order to load a new address into the SRAM, as described in the Single Read Access section above ...

Page 5

... Byte write capability has been included in order to greatly simplify Read/Modify/Write sequences, which can be reduced to simple byte write operations. Because the CY7C1352F is a common I/O device, data should not be driven into the device while the outputs are active. The Output Enable (OE) can be deasserted HIGH before presenting data to the DQs and DQP three-state the output drivers ...

Page 6

... ZZ active to snooze current ZZI t ZZ inactive to exit snooze current RZZI Document #: 38-05211 Rev ADV/ Test Conditions − 0.2V ZZ > − 0.2V ZZ > < 0.2V This parameter is sampled This parameter is sampled CY7C1352F OE CEN CLK L-H three-state L-H – three-state Min. Max CYC 2t CYC 2t CYC 0 Page ...

Page 7

... MHz DD OUT 1/t MAX CYC 4.4-ns cycle, 225 MHz 5-ns cycle, 200 MHz 6-ns cycle, 166 MHz 7.5-ns cycle, 133 MHz 10-ns cycle, 100MHz CY7C1352F Ambient Temperature ( 0°C to +70°C 3.3V – 5%/+10% 2.5V –5% –40°C to +85°C Min. Max. ...

Page 8

... Max, Device Deselected, All speeds DD ≥ V ≤ Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA / JESD51. Test Conditions T = 25° MHz 3.3V 3.3V DDQ CY7C1352F Min. Max. Unit 120 mA 115 mA 110 mA 100 105 mA 100 ...

Page 9

... SRAMs when sharing the same OELZ CHZ CLZ = 3.3V and is 1.25V when V = 2.5V. DDQ CY7C1352F ALL INPUT PULSES V DD 90% 10% GND ≤ 1ns (c) ALL INPUT PULSES V DD 90% ...

Page 10

... D(A2+1) BURST READ READ BURST WRITE Q(A3) Q(A4) READ D(A2+1) Q(A4+1) DON’T CARE UNDEFINED is LOW. When CE is HIGH HIGH CY7C1352F (continued) 200 MHz 166 MHz 133 MHz 1.2 1.5 1.5 1.2 1.5 1.5 1.2 1.5 1.5 1.2 1.5 1.5 1.2 1 ...

Page 11

... DQs are in high-Z when exiting ZZ sleep mode. Document #: 38-05211 Rev. *C [18, 19, 21 D(A1) Q(A2) STALL READ WRITE STALL Q(A3) D(A4) DON’T CARE UNDEFINED ZZI I DDZZ CY7C1352F D(A4) Q(A3) NOP READ DESELECT Q(A5) t ZZREC t RZZI DESELECT or READ Only 10 t CHZ Q(A5) CONTINUE DESELECT Page ...

Page 12

... CY7C1352F-166AI 133 CY7C1352F-133AC CY7C1352F-133AI 100 CY7C1352F-100AC CY7C1352F-100AI Shaded areas contain advance information. Please contact your local cypress sales representative to order parts that are not listed in the ordering information table. Package Diagram 100-Pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 ZBT is a trademark of Integrated Device Technology. NoBL and No Bus Latency are trademarks of Cypress Semiconductor. All product and company names mentioned in this document are trademarks of their respective holders ...

Page 13

... Document History Page Document Title: CY7C1352F 4-Mbit (256Kx18) Pipelined SRAM with NoBL™ Architecture Document #: 38-05211 Rev. *C REV. ECN NO. Issue Date ** 119826 12/16/02 *A 123116 01/18/03 *B 200662 See ECN *C 225487 See ECN Document #: 38-05211 Rev. *C Orig. of Change HGK New Data Sheet RBI ...

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