LHF00L31 Sharp Microelectronics, LHF00L31 Datasheet - Page 23

• Manufacturer Part Number: LHF00L31
• Description: IC FLASH 16MBIT 70NS 48TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LHF00L31

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-1888

1.2.5 AC Characteristics - Write Operations
NOTES:
1. The timing characteristics for reading the status register during block erase, full chip erase, program and OTP program
2. A write operation can be initiated and terminated with either CE# or WE#.
3. Sampled, not 100% tested.
4. Write pulse width (t
5. Write pulse width high (t
6. V
7. t
8. Refer to Table 4 for valid address and data for block erase, full chip erase, program, OTP program or lock bit
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
DVWH
AVWH
WHEH
WHDX
WHAX
WHWL
SHWH
VVWH
WHGL
QVSL
QVVL
WHR0
operations are the same as during read-only operations. Refer to AC Characteristics for read-only operations.
CE# or WE# (whichever goes high first). Hence, t
edge of CE# or WE# (whichever goes low last). Hence, t
(SR.1/3/4/5=0).
configuration.
WHR0
PP
Symbol
should be held at V
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
WLEL
(t
PHEL
EHR0
AVEH
SHEH
EHWH
EHGL
ELEH
DVEH
EHDX
EHAX
VVEH
EHEL
EHR0
)
)
)
)
)
)
)
)
)
)
)
)
)
) after the Read Query or Read Identifier Codes/OTP command=t
Write Cycle Time
RST# High Recovery to WE# (CE#) Going Low
CE# (WE#) Setup to WE# (CE#) Going Low
WE# (CE#) Pulse Width
Data Setup to WE# (CE#) Going High
Address Setup to WE# (CE#) Going High
CE# (WE#) Hold from WE# (CE#) High
Data Hold from WE# (CE#) High
Address Hold from WE# (CE#) High
WE# (CE#) Pulse Width High
WP# High Setup to WE# (CE#) Going High
V
Write Recovery before Read
WP# High Hold from Valid SRD
V
WE# (CE#) High to SR.7 Going "0"
WP
PP
PP
) is defined from the falling edge of CE# or WE# (whichever goes low last) to the rising edge of
Setup to WE# (CE#) Going High
Hold from Valid SRD
PP
WPH
=V
PPH1/2
) is defined from the rising edge of CE# or WE# (whichever goes high first) to the falling
until determination of block erase, full chip erase, program or OTP program success
V
CC
Parameter
=2.7V-3.6V, T
WP
(1), (2)
LHF00L31
=t
WLWH
WPH
A
=-40°C to +85°C
=t
=t
WHWL
ELEH
=t
=t
WLEH
EHEL
=t
=t
ELWH
WHEL
AVQV
Notes
3, 7
3, 6
3, 6
3
4
8
8
5
3
3
.
+100ns.
=t
EHWL
.
Min.
150
200
70
50
40
50
20
30
0
0
0
0
0
0
0
t
AVQV
Max.
50
+
Rev. 2.45
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20