CY7C1426AV18-250BZXC Cypress Semiconductor Corp, CY7C1426AV18-250BZXC Datasheet - Page 17

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CY7C1426AV18-250BZXC

Manufacturer Part Number
CY7C1426AV18-250BZXC
Description
IC SRAM 36MBIT 250MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1426AV18-250BZXC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
36M (4M x 9)
Speed
250MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1426AV18-250BZXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document Number: 38-05614 Rev. *C
Scan Register Sizes
Instruction Codes
Instruction
Bypass
ID
Boundary Scan
EXTEST
IDCODE
SAMPLE Z
RESERVED
SAMPLE/PRELOAD
RESERVED
RESERVED
BYPASS
Register Name
Instruction
Bit Size
109
32
3
1
Code
000
001
010
011
100
101
110
111
Captures the Input/Output ring contents.
Loads the ID register with the vendor ID code and places the register
between TDI and TDO. This operation does not affect SRAM operation.
Captures the Input/Output contents. Places the boundary scan register
between TDI and TDO. Forces all SRAM output drivers to a High-Z
state.
Do Not Use: This instruction is reserved for future use.
Captures the Input/Output ring contents. Places the boundary scan
register between TDI and TDO. Does not affect the SRAM operation.
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does
not affect SRAM operation.
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Page 17 of 28
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