CY7C1426AV18-250BZXC Cypress Semiconductor Corp, CY7C1426AV18-250BZXC Datasheet - Page 21

• Manufacturer Part Number: CY7C1426AV18-250BZXC
• Description: IC SRAM 36MBIT 250MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1426AV18-250BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 36M (4M x 9)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 38-05614 Rev. *C
AC Test Loads and Waveforms
Notes:
Capacitance
Thermal Resistance
23. Tested initially and after any design or process change that may affect these parameters.
24. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, V
C
C
C
Parameter
IN
CLK
O
pulse levels of 0.25V to 1.25V, and output loading of the specified I
Parameter
OUTPUT
Device
Under
Test
Θ
Θ
JC
JA
V
REF
ZQ
(a)
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
[23]
Z
RQ =
250Ω
Description
0.75V
0
Input Capacitance
Clock Input Capacitance
Output Capacitance
= 50Ω
[23]
Description
V
REF
R
= 0.75V
L
= 50Ω
Test conditions follow standard test methods and procedures for
measuring thermal impedance, per EIA/JESD51.
Device
Under
Test
OUTPUT
V
REF
ZQ
T
V
V
A
DD
DDQ
OL
= 25°C, f = 1 MHz,
/I
= 1.8V
OH
= 1.5V
0.75V
RQ =
250Ω
(b)
and load capacitance shown in (a) of AC Test Loads.
V
Test Conditions
REF
= 0.75V
Test Conditions
R = 50Ω
5 pF
0.25V
1.25V
Slew Rate = 2 V/ns
ALL INPUT PULSES
0.75V
CY7C1426AV18
CY7C1413AV18
CY7C1415AV18
CY7C1411AV18
165 FBGA
Max.
Package
5
4
5
17.2
3.2
DDQ
Page 21 of 28
[24]
= 1.5V, input
Unit
°C/W
°C/W
pF
pF
pF
Unit
[+] Feedback