CY7C1568V18-400BZXC Cypress Semiconductor Corp, CY7C1568V18-400BZXC Datasheet - Page 24

• Manufacturer Part Number: CY7C1568V18-400BZXC
• Description: IC SRAM 72MBIT 400MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1568V18-400BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 72M (2M x 36)
• Speed: 400MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Read/Write/Deselect Sequence
Notes
Document Number: 001-06551 Rev. *E
29. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.
30. Outputs are disabled (High Z) one clock cycle after a NOP.
31. In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram.
QVLD
R/W
DQ
CQ
CQ
LD
A
K
K
1
NOP
t KH
(Read Latency = 2.5 Cycles)
t KL
t
t SA t HA
SC
A0
READ
2
t HC
t CYC
A1
READ
3
t
KHKH
t
QVLD
[29, 30, 31]
Figure 5. Waveform for 2.5 Cycle Read Latency
4
NOP
t CLZ
t CCQO
t CQOH
t CO
t CQOH
Q00
5
NOP
Q01 Q10
t
QVLD
t DOH
t CCQO
NOP
6
Q11
t
CQDOH
t CQD
A2
t
CHZ
WRITE
7
t SD
t HD
CY7C1566V18, CY7C1577V18
CY7C1568V18, CY7C1570V18
D20 D21
A3
WRITE
8
t CQH
t SD
D30
A4
READ
9
t CQHCQH
D31
t
HD
DON’T CARE
10
NOP
t
QVLD
NOP
11
UNDEFINED
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Q40
12
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