M24C64-RMB6TG STMicroelectronics, M24C64-RMB6TG Datasheet - Page 28
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M24C64-RMB6TG
Manufacturer Part Number
M24C64-RMB6TG
Description
IC EEPROM 64KBIT 400KHZ 8MLP
Manufacturer
STMicroelectronics
Datasheet
1.M24C64-WMN6TP.pdf
(44 pages)
Specifications of M24C64-RMB6TG
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
64K (8K x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-MLP, 8-UFDFPN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DC and AC parameters
28/44
Table 14.
1. If the application uses the voltage range R device with 2.5 V < V
2. Only for devices operating at f
3. Characterized value, not tested in production.
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
V
please refer to
completion of the internal write cycle t
I
CC0
CC1
V
I
LO
CC
OL
LI
IH
IL
Input leakage current
(E1, E2, SCL, SDA)
Output leakage current
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24xxx-R - device grade 6)
Table 12
Parameter
instead of this table.
C
max = 1 MHz (see
Doc ID 16891 Rev 23
W
V
device in Standby mode
SDA in Hi-Z, external voltage
applied on SDA: V
V
f
During t
Device not selected
V
1.8 V ≤ V
1.8 V ≤ V
1.8 V ≤ V
I
Test conditions
c
OL
(t
IN
CC
IN
= 1 MHz
W
= 1 mA, V
= V
= V
is triggered by the correct decoding of a Write instruction).
to those in
= 1.8 V, f
SS
SS
W
M24C64-DF, M24C64-W, M24C64-R, M24C64-F
CC
CC
CC
, 1.8 V < V
(2)
or V
or V
Table
Table
< 2.5 V
< 2.5 V
< 2.5 V
c
CC
CC
= 400 kHz
CC
17).
Table 8
, V
= 1.8 V
(1)
10)
SS
CC
(in addition
CC
(4)
or V
cc
,
= 1.8 V
< 2.5 V
< 5.5 V and -40 °C < TA < +85 °C,
and
CC
0.75V
0.75V
–0.45
Min.
CC
CC
0.25 V
V
CC
Max.
3
± 2
± 2
0.8
2.5
6.5
0.2
1
(3)
+0.6
CC
Unit
mA
mA
mA
µA
µA
µA
V
V
V
V