HYI25D256160CE-5 Qimonda, HYI25D256160CE-5 Datasheet - Page 19

• Manufacturer Part Number: HYI25D256160CE-5
• Description: IC DDR SDRAM 256MBIT 66TSOP
• Manufacturer: Qimonda

Specifications of HYI25D256160CE-5

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 675-1021-2

9) Concurrent Auto Precharge: This device supports “Concurrent Auto Precharge”. When a read with auto precharge or a write with auto
10) A Write command may be applied after the completion of data output.
Rev. 2.4, 2007-07
03062006-8CCM-VPUW
From Command
WRITE w/AP
Read w/AP
precharge is enabled any command may follow to the other banks as long as that command does not interrupt the read or write data transfer
and all other limitations apply (e.g. contention between READ data and WRITE data must be avoided). The minimum delay from a read or
write command with auto precharge enable, to a command to a different banks is summarized in
To Command (different bank)
Read or Read w/AP
Write to Write w/AP
Precharge or Activate
Read or Read w/AP
Write or Write w/AP
Precharge or Activate
19
Minimum Delay with Concurrent Auto
Precharge Support
1 + (BL/2) +
BL/2
1
BL/2
CL (rounded up) + BL/2
1
Truth Table 5: Concurrent Auto Precharge
HY[B/I]25D256[16/40/80]0C[E/C/F/T](L)
t
256 Mbit Double-Data-Rate SDRAM
WTR
Table
15.
Internet Data Sheet
TABLE 15
Unit
t
t
t
t
t
t
CK
CK
CK
CK
CK
CK