DS1216D Maxim Integrated Products, DS1216D Datasheet - Page 13
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DS1216D
Manufacturer Part Number
DS1216D
Description
IC SMART/RAM 5V 256K/1M 32-DIP
Manufacturer
Maxim Integrated Products
Datasheet
1.DS1216C.pdf
(14 pages)
Specifications of DS1216D
Controller Type
Smartwatch RAM
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-DIP (0.600", 15.24mm) Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
DS1216D
Manufacturer:
DALLAS
Quantity:
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Company:
Part Number:
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Manufacturer:
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Quantity:
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Part Number:
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WARNING:
Under no circumstances should negative undershoots of any amplitude be allowed when the devi
battery-backup mode. Water washing for flux removal will discharge internal lithium source because
exposed voltage pins are present.
NOTES:
1) Pin locations are designated “U” when a parameter definition refers to the socket receptacle and “
2) No memory inserted in th
3) Pin 26L can be connected to V
4) SmartWatch sockets can be successfully processed through some conventional wave-soldering
5) t
6) V
7) Input pulse rise and fall times equal 10ns.
8) Applies to pins RST L, A2 L, A0 L, CE L, OE L, and WE L.
9) t
10) t
11) t
12) t
13) RST (Pin 1) has an internal pullup resistor.
14) Expected data retention is based on using an external SRAM with a data retention current of less than
15) The DS1216 products are shipped with the battery-backup power off. First power-up switches backup
when a parameter definition refers to the socket pin.
techniques as long as temperature exposure to the lithium energy source contained within does not
exceed +85C. However, post-solder cleaning with water-washing techniques is not permi
Discharge to the lithium energy source can result, even if deionized water is used. It is equally
imperative that ultrasonic vibration is not used in order to avert damage to the quartz crystal re
employed by the oscillator circuit.
is the maximum voltage drop from V
0.5A at +25°C. Expected data-retention time (time while on battery) for a given RAM ba
current can be calculated using the following formula:
battery on to clock and RAM V
CE
WR
DH
AS
AH
CCO
max must be met to ensure data integrity on power loss.
is a function of the first occurring edge of OE or CE.
and t
is a function of the latter occurring edge of OE or CE.
is a functions of th
1 is the maximum voltage drop from V
DS
are a function of the first occurring edge of WE or CE.
0.045 / (current in amps) = data-retention time in hours
e latter occurring edge of WE or CE.
e socket.
CC
CC
or left disconnected at the PC board.
pin upon power-down.
BAT
to V
CC
CC
13 of 14
(L) to V
(U) while the part is in battery backup.
CC
(U) while Vcc(L) is supplying power. V
DS1216 SmartWatch RAM/SmartWatch ROM
ce is in
sonator
ssible.
L”
CCO
ttery
2