S-8243BADFT-TB-G Seiko Instruments, S-8243BADFT-TB-G Datasheet - Page 12

• Manufacturer Part Number: S-8243BADFT-TB-G
• Description: IC LI-ION BATT PROTECT 16-TSSOP
• Manufacturer: Seiko Instruments

Specifications of S-8243BADFT-TB-G

• Function: Over/Under Voltage Protection
• Battery Type: Lithium-Ion (Li-Ion), Lithium-Polymer (Li-Pol)
• Voltage - Supply: 6 V ~ 18 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Output Voltage: 3.379 V
• Operating Temperature Range: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

12
BATTERY PROTECTION IC FOR 3-SERIAL OR 4-SERIAL CELL PACK
S-8243A/B Series
4. Overcharge detection voltages, overcharge detection hysteresis, overdischarge detection
4. 1 Overcharge detection voltages, hysteresis voltages, and overdischarge detection voltages
4. 2 Overcurrent detection voltages
voltages, overdischarge detection hysteresis, and overcurrent detection voltages (Test circuit 4)
In the following V
The COP pin and the DOP pin should provide “Low”, which is a voltage equal to V
that V1 = V2 = V3 = V4 = 3.5 V.
The overcharge detection voltage V
a voltage equal to VDD × 0.9 V or higher, when the voltage V1 is gradually increased from the starting condition V1
= 3.5 V. The overcharge release voltage V
when the voltage V1 is gradually decreased. The hysteresis voltage of the overcharge detection V
by the difference between the overcharge detection voltage V
The overdischarge detection voltage V
the voltage V1 is gradually decreased from the starting condition V1 = 3.5 V. The overdischarge release voltage
V
The hysteresis of the overdischarge detection voltage V
overdischarge release voltage V
Other overcharge detection voltage V
voltage V
manner as in the case for n = 1.
Starting condition is V1 = V2 = V3 = V4 = 3.5 V, VMP = VDD, and the CDT pin is open. The DOP pin voltage thus
provides “Low”
The overcurrent detection voltage 1, VIOV1 is defined by the voltage difference VDD − VMP at which the DOP pin
voltage becomes “High” when the voltage of VMP pin is decreased.
Starting condition for measuring the overcurrent detection voltage 2 and 3 is V1 = V2 = V3 = V4 = 3.5 V, V
and the CDT pin voltage V
The overcurrent detection voltage 2, V
becomes “High” when the voltage of VMP pin is decreased.
The overcurrent detection delay time 2, t
VM pin voltage is changed quickly to V
The overcurrent detection voltage 3, V
becomes “High” when the voltage of VMP pin is decreased at the speed 10 V / ms.
The overcurrent detection delay time 3, t
VM pin voltage is changed quickly to V
DU1
is defined by the voltage at which DOP pin voltage becomes “Low” when the voltage V1 is gradually increased.
DLn
, and hysteresis of the overdischarge detection voltage V
MP
= V
DD
and the CDT pin is open.
CDT
= V
DU1
SS
CU1
and the overdischarge detection voltage V
. The DOP pin voltage thus provides “Low”.
CUn
IOV2
DL1
IOV2
IOV3
is defined by the voltage at which COP pin voltage becomes “High”, which is
IOV3
Seiko Instruments Inc.
IOV2
IOV3
, hysteresis voltage of overcharge detection V
is defined by the voltage difference V
is defined by the voltage at which DOP pin voltage becomes “High” when
min.−0.2 V from the starting condition V
min.−0.2 V from the starting condition V
is defined by the voltage of the VM pin at which the DOP pin voltage
CL1
is a time needed for the DOP pin to become “High” from “Low” when the
is a time needed for the DOP pin to become “High” from “Low” when the
is defined by the voltage at which COP pin voltage becomes “Low”
HD1
CU1
is then defined by the difference between the
and the overcharge release voltage V
HDn
( for n = 2 to 4) are defined in the same
DD
DL1
DD
−V
.
MP
MP
× 0.1 V or lower, in the condition
MP
= V
= V
at which the DOP pin voltage
HCn
DD
DD
, overdischarge detection
.
.
HC1
Rev.3.0
is then defined
CL1
.
MP
= V
_00
DD