L6388D STMicroelectronics, L6388D Datasheet - Page 5
![IC DRIVER HI/LO SIDE HV 8-SOIC](/photos/1/38/13851/497-8-soic_sml.jpg)
L6388D
Manufacturer Part Number
L6388D
Description
IC DRIVER HI/LO SIDE HV 8-SOIC
Manufacturer
STMicroelectronics
Type
High Side/Low Sider
Datasheet
1.L6388E.pdf
(11 pages)
Specifications of L6388D
Configuration
High and Low Side, Synchronous
Input Type
Non-Inverting
Delay Time
225ns
Current - Peak
400mA
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
600V
Voltage - Supply
17V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Rise Time
100 ns
Fall Time
80 ns
Supply Voltage (min)
- 0.3 V
Maximum Power Dissipation
750 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 45 C
Number Of Drivers
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
L6388D
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
L6388D013TR
Manufacturer:
MOT
Quantity:
6 222
Part Number:
L6388D013TR
Manufacturer:
ST
Quantity:
20 000
3
Input logic is provided with an interlocking circuitry which avoids the two outputs (LVG, HVG) to be active at the
same time when both the logic input pins (LIN, HIN) are at a high logic level. In addition, to prevent cross con-
duction of the external MOSFETs, after each output is turned-off the other output cannot be turned-on before a
certain amount of time (DT) (see Figure 4).
Figure 6. Typical Rise and Fall Times vs. Load
3.1 BOOTSTRAP DRIVER
A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a
high voltage fast recovery diode (fig. 8a). In the L6388 a patented integrated structure replaces the external di-
ode. It is realized by a high voltage DMOS, driven synchronously with the low side driver (LVG), with in series
a diode, as shown in fig. 8b
An internal charge pump (fig. 8b) provides the DMOS driving voltage .
The diode connected in series to the DMOS has been added to avoid undesirable turn on of it.
3.2 CBOOT selection and charging
To choose the proper C
C
The ratio between the capacitors C
It has to be:
e.g.: if Q
If HVG has to be supplied for a long time, the CBOOT selection has to take into account also the leakage losses.
e.g.: HVG steady state consumption is lower than 200µA, so if HVG T
C
The internal bootstrap driver gives great advantages: the external fast recovery diode can be avoided (it usually
has great leakage current). This structure can work only if V
the LVG is on. The charging time (T
(nsec)
EXT
EXT
time
250
200
150
100
50
0
INPUT LOGIC
. This charge on a 1µF capacitor means a voltage drop of 1V.
is related to the MOS total gate charge :
For both high and low side buffers @25˚C Tamb
0
gate
Capacitance
is 30nC and V
1
2
BOOT
gate
3
value the external MOS can be seen as an equivalent capacitor. This capacitor
is 10V, C
4
EXT
charge
T r
T f
and C
EXT
) of the C
5
D99IN1054
is 3nF. With C
BOOT
C (nF)
CBOOT>>>CEXT
C
EXT
is proportional to the cyclical voltage loss .
BOOT
=
Q
-------------- -
V
is the time in which both conditions are fulfilled and it
Figure 7. Quiescent Current vs. Supply
gate
gate
BOOT
OUT
(µA)
10
10
10
10
Iq
4
3
2
is close to GND (or lower) and in the meanwhile
0
= 100nF the drop would be 300mV.
2
Voltage
ON
is 5ms, CBOOT has to supply 1µC to
4
6
8
10
12
14
D99IN1055
16 V
L6388
S
5/11
(V)