ISL6622ACBZ Intersil, ISL6622ACBZ Datasheet

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ISL6622ACBZ

Manufacturer Part Number
ISL6622ACBZ
Description
IC MOSFET DRVR SYNC BUCK 8-SOIC
Manufacturer
Intersil
Datasheet

Specifications of ISL6622ACBZ

Configuration
High and Low Side, Synchronous
Input Type
PWM
Delay Time
20ns
Current - Peak
1.25A
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
36V
Voltage - Supply
6.8 V ~ 13.2 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
VR11.1 Compatible Synchronous
Rectified Buck MOSFET Drivers
The ISL6622A is a high frequency MOSFET driver designed
to drive upper and lower power N-Channel MOSFETs in a
synchronous rectified buck converter topology. The advanced
PWM protocol of ISL6622A is specifically designed to work
with Intersil VR11.1 controllers and combined with
N-Channel MOSFETs, form a complete core-voltage regulator
solution for advanced microprocessors. When ISL6622A
detects a PSI protocol sent by an Intersil VR11.1 controller, it
activates Diode Emulation (DE) operation; otherwise, it
operates in normal Continuous Conduction Mode (CCM)
PWM mode.
In the 8 Ld SOIC package, the ISL6622A drives the upper
gate to 12V while the lower get can be driven from 5V to 12V.
The 10 Ld DFN part allows for more flexibility. The upper gate
can be driven from 5V to 12V using the UVCC pin and the
lower gate can also be driven from 5V to 12V using the LVCC
pin. This provides the flexibility necessary to optimize
applications involving trade-offs between gate charge and
conduction losses.
To further enhance light load efficiency, the ISL6622A
enables diode emulation operation during PSI mode. This
allows Discontinuous Conduction Mode (DCM) by detecting
when the inductor current reaches zero and subsequently
turning off the low side MOSFET to prevent it from sinking
current.
An advanced adaptive shoot-through protection is integrated
to prevent both the upper and lower MOSFETs from
conducting simultaneously and to minimize dead time. The
ISL6622A has a 20kΩ integrated high-side gate-to-source
resistor to prevent self turn-on due to high input bus dV/dt.
This driver adds an overvoltage protection feature
operational while VCC is below its POR threshold; the
PHASE node is connected to the gate of the low side
MOSFET (LGATE) via a 10kΩ resistor limiting the output
voltage of the converter close to the gate threshold of the low
side MOSFET, dependent on the current being shunted,
which provides some protection to the load should the upper
MOSFET(s) become shorted.
®
1
Data Sheet
1-888-INTERSIL or 1-888-468-3774
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-Through Protection
• 36V Internal Bootstrap Schottky Diode
• Diode Emulation For Enhanced Light Load Efficiency
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency
• Advanced PWM Protocol (Patent Pending) to Support PSI
• Pre-POR Overvoltage Protection for Start-up and
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
• Dual Flat No-Lead (DFN) Package
• Pb-Free (RoHS Compliant)
Applications
• High Light Load Efficiency Voltage Regulators
• Core Regulators for Advanced Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
• Technical Brief TB417 “Designing Stable Compensation
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
Mode, Diode Emulation, Three-State Operation
Shutdown
Sinking
- Near Chip-Scale Package Footprint; Improves PCB
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Networks for Single Phase Voltage Mode Buck
Regulators” for Power Train Design, Layout Guidelines,
and Feedback Compensation Design
Efficiency and Thinner in Profile
March 19, 2009
All other trademarks mentioned are the property of their respective owners.
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2008, 2009. All Rights Reserved
ISL6622A
FN6601.2

Related parts for ISL6622ACBZ

ISL6622ACBZ Summary of contents

Page 1

... CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | 1-888-INTERSIL or 1-888-468-3774 Intersil (and design registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2008, 2009. All Rights Reserved All other trademarks mentioned are the property of their respective owners. ISL6622A ...

Page 2

... Ordering Information PART NUMBER (Note) ISL6622ACBZ* 6622A CBZ ISL6622ACRZ* 622A ISL6622AIBZ* 6622A IBZ ISL6622AIRZ* 22AI *Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications. NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations) ...

Page 3

Typical Application Circuit +5V COMP VCC FB VDIFF VSEN RGND ISEN1- EN_VTT VTT ISEN1+ VR_RDY VID7 ISL6334 ISL6334 VID6 VID5 VID4 VID3 VID2 ISEN2- VID1 ISEN2+ VID0 PSI PWM3 VR_FAN ISEN3- VR_HOT ISEN3+ VIN EN_PWR GND PWM4 IMON ISEN4- ISEN4+ ...

Page 4

... Recommended Operating Conditions < 36V) BOOT-GND Ambient Temperature Range ISL6622AIBZ, ISL6622AIRZ . . . . . . . . . . . . . . . . .-40°C to +85°C ISL6622ACBZ, ISL6622ACRZ . . . . . . . . . . . . . . . . . 0°C to +70°C Maximum Operating Junction Temperature +125°C Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . 6.8V to 13.2V Supply Voltage Range, UVCC . . . . . . . . . . . . . . . . . 4.75V to 13.2V Supply Voltage Range, LVCC . . . . . . . . . . . . . . . . . . 4.75V to 13.2V ...

Page 5

Electrical Specifications Recommended Operating Conditions. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. (Continued) PARAMETER Three-State Upper Gate Rising Threshold (Note 4) Three-State Upper ...

Page 6

... MOSFET due to high dV/dt of the switching node. Advanced PWM Protocol (Patent Pending) The advanced PWM protocol of ISL6622A is specifically designed to work with Intersil VR11.1 controllers. When ISL6622A detects a PSI protocol sent by an Intersil VR11.1 controller, it turns on diode emulation operation; otherwise, it remains in normal CCM PWM mode ...

Page 7

MOSFET( becomes shorted. If the PHASE node goes higher than the gate threshold of the lower MOSFET, it results in the progressive turn-on of the device and the effective clamping of ...

Page 8

The total gate drive power losses are dissipated among the resistive components along the transition path, as outlined in Equation 4. The drive resistance dissipates a portion of the total gate drive power losses, the rest will be dissipated by ...

Page 9

... ISL6622B SOIC DFN 9 ISL6622A Gate Drive Voltage Options VIN Intersil provides various gate drive voltage options in D ISL6622 product family, as shown in Table The ISL6622 can drop the low-side MOSFET’s gate drive C voltage when operating in DEM, while the high-side FET’s ...

Page 10

... The pin #1 identifier may be either a mold or mark feature. 7. Dimensions D2 and E2 are for the exposed pads which provide NX b improved electrical and thermal performance Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389. 0. 0.200 ...

Page 11

... Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use ...

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