IR22141SS International Rectifier, IR22141SS Datasheet - Page 17
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IR22141SS
Manufacturer Part Number
IR22141SS
Description
IC DRIVER HALF BRIDGE SGL 24SSOP
Manufacturer
International Rectifier
Datasheet
1.IR21141SSTRPBF.pdf
(34 pages)
Specifications of IR22141SS
Configuration
Half Bridge
Input Type
Non-Inverting
Delay Time
440ns
Current - Peak
2A
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
1200V
Voltage - Supply
11.5 V ~ 20 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
24-SSOP
Family Hvic
General Purpose HVICs
Channels
2
Topology
Half Bridge
Application
General Purpose / Motor Control
Voffset
1200
Io+ (ma)
2000
Io- (ma)
3000
Separate Power And Logic Ground
Yes
Uvlo
Vcc / Vbs
Vbsuv+ / Vccuv+ Min (v)
9.3
Vbsuv+ / Vccuv+ Typ (v)
10.2
Vbsuv+ / Vccuv+ Max (v)
11.4
Vbsuv- / Vccuv- Min (v)
8.7
Vbsuv- / Vccuv- Typ (v)
9.3
Vbsuv- / Vccuv- Max (v)
10.3
Dt / Sdt Min (ns)
5700
Dt / Sdt Typ (ns)
9250
Dt / Sdt Max (ns)
13500
T On Min (ns)
220
T On Typ (ns)
440
T On Max (ns)
660
T Off Min (ns)
220
T Off Typ (ns)
440
T Off Max (ns)
660
Fault Reporting
Yes
Package
24 Lead
Part Status
Active & Preferred
Special Features
Soft Shutdown and Desaturation Detection
For Use With
IRMD2214SS - KIT DESIGN EVAL BOARD IR2214SSIRMD22141SS - KIT DESIGN EVAL BOARD/IR22141SS
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IR22141SS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IR22141SS
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IR22141SSPBF
Manufacturer:
International Rectifier
Quantity:
135
Part Number:
IR22141SSPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IR22141SSTRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
2.1 Bootstrap Supply
The V
driver circuitry of the gate driver. This supply sits on top
of the V
bootstrap method is used to generate the V
and can be used with any of the IR211(4,41)/
IR221(4,41) drivers. The bootstrap supply is formed by
a diode and a capacitor as connected in Fig. 19.
This method has the advantage of being simple and low
cost but may force some limitations on duty-cycle and
on-time since they are limited by the requirement to
refresh the charge in the bootstrap capacitor. Proper
capacitor
limitations.
2.2 Bootstrap Capacitor Sizing
To size the bootstrap capacitor, the first step is to
establish the minimum voltage drop ( ∆V
have to guarantee when the high side IGBT is on.
If V
to maintain, the voltage drop must be:
under the condition,
where V
diode forward voltage, V
of low side IGBT, and V
undervoltage negative going threshold.
Now
contributing V
V
CC
GEmin
− IGBT turn on required gate charge ( Q
− IGBT gate-source leakage current ( I
− Floating section quiescent current ( I
− Floating section leakage current ( I
− Bootstrap diode leakage current ( I
− Desat diode bias when on ( I
Figure 19: Bootstrap Supply Schematic
BS
we must
CC
∆
S
is the minimum gate emitter voltage we want
voltage provides the supply to the high side
VCC
V
bootstrap
resistor
voltage and so it must be floating. The
R
choice
is the IC voltage supply, V
boot
BS
BS
≤
SSDH
to decrease:
HOP
HON
VB
VS
2 Sizing Tips
V
V
bootstrap
consider
CC
diode
V
V
GE
BS
can
F
−
min
BSUV-
CEon
V
F
>
bootstrap
capacitor
reduce
is emitter-collector voltage
−
is the high-side supply
V
the
V
BSUV
GE
DS
min
−
influencing
),
drastically
V
CEon
−
V
GE
LK
LK_DIODE
V
F
QBS
CEon
LK_GE
),
COM
DC+
is bootstrap
BS
G
),
),
) that we
BS
I
LOAD
),
),
V
FP
factors
supply
these
motor
17
I
capacitor and can be ignored if other types of
capacitors are used. It is strongly recommend using at
least one low ESR ceramic capacitor (paralleling
electrolytic and low ESR ceramic may result in an
efficient solution).
Then we have:
The minimum size of bootstrap capacitor is:
An example follows using IR2214SS or IR22141SS:
a) using a 25 A @ 125 ° C 1200 V IGBT
(IRGP30B120KD):
And:
the maximum voltage drop ∆V
And the bootstrap capacitor is:
NOTICE: V
IGBTs may require a higher supply to work correctly
with the bootstrap technique. Also V
must be accounted in the above formulas.
Q
∆
LK_CAP
V
TOT
• I
• I
• Q
• Q
• I
• I
• I
• I
• T
•
•
•
•
BS
− Charge required by the internal level shifters
− Bootstrap capacitor leakage current ( I
− High side on time ( T
QBS
LK
LK_GE
LK_DIODE
LK_CAP
DS-
HON
LS
G
( Q
=
≤
= 50 µA
+
V
V
V
V
is only relevant when using an electrolytic
= 160 nC
= 150 µA (see Static Electrical Characteristics);
Q
V
= 20 nC
LS
= 800 µA
CC
F
CEonmax
GEmin
I
= 100 µs.
CC
G
= 100 nA
); typical 20 nC,
= 1 V
LK
= 0
CC
= 15 V
+
= 100 µA
C
−
+
= 10.5 V
Q
has been chosen to be 15 V. Some
IR21141/IR22141SSPbF
V
BOOT
= 3.1 V
I
LS
F
C
(see Static Electrical Characteristics);
LK
−
BOOT
+
_
V
≥
(neglected for ceramic capacitor);
DIODE
(
GE
I
290
LK
min
0
min
4 .
(datasheet IRGP30B120KD);
(datasheet IRGP30B120KD);
HON
_
(reverse recovery <100 ns);
GE
+
−
=
nC
V
© 2009 International Rectifier
).
BS
I
V
+
∆
Q
LK
CEon
becomes
V
=
I
TOT
_
QBS
BS
(datasheet IR2214);
CAP
725
=
+
CC
+
nF
I
variations
DS
LK_CAP
−
)
⋅
T
),
HON