IR22141SS International Rectifier, IR22141SS Datasheet - Page 20
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IR22141SS
Manufacturer Part Number
IR22141SS
Description
IC DRIVER HALF BRIDGE SGL 24SSOP
Manufacturer
International Rectifier
Datasheet
1.IR21141SSTRPBF.pdf
(34 pages)
Specifications of IR22141SS
Configuration
Half Bridge
Input Type
Non-Inverting
Delay Time
440ns
Current - Peak
2A
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
1200V
Voltage - Supply
11.5 V ~ 20 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
24-SSOP
Family Hvic
General Purpose HVICs
Channels
2
Topology
Half Bridge
Application
General Purpose / Motor Control
Voffset
1200
Io+ (ma)
2000
Io- (ma)
3000
Separate Power And Logic Ground
Yes
Uvlo
Vcc / Vbs
Vbsuv+ / Vccuv+ Min (v)
9.3
Vbsuv+ / Vccuv+ Typ (v)
10.2
Vbsuv+ / Vccuv+ Max (v)
11.4
Vbsuv- / Vccuv- Min (v)
8.7
Vbsuv- / Vccuv- Typ (v)
9.3
Vbsuv- / Vccuv- Max (v)
10.3
Dt / Sdt Min (ns)
5700
Dt / Sdt Typ (ns)
9250
Dt / Sdt Max (ns)
13500
T On Min (ns)
220
T On Typ (ns)
440
T On Max (ns)
660
T Off Min (ns)
220
T Off Typ (ns)
440
T Off Max (ns)
660
Fault Reporting
Yes
Package
24 Lead
Part Status
Active & Preferred
Special Features
Soft Shutdown and Desaturation Detection
For Use With
IRMD2214SS - KIT DESIGN EVAL BOARD IR2214SSIRMD22141SS - KIT DESIGN EVAL BOARD/IR22141SS
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IR22141SS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IR22141SS
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IR22141SSPBF
Manufacturer:
International Rectifier
Quantity:
135
Part Number:
IR22141SSPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IR22141SSTRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
In any case, the worst condition for unwanted turn on is
with very fast steps on the IGBT collector.
In that case, the collector to gate transfer function can
be approximated with the capacitor divider:
R
IRGP30B120K(D)
DRn
IRGP30B120K(D)
IRG4PH30K(D)
IRG4PH30K(D)
=
IGBT
Vcc
IGBT
I
o
−
V
ge
=
V
de
19 nC
10 nC
⋅
Qge
(
19 nC
10 nc
C
Qge
RESoff
IRGP30B120K(D)
C
IRG4PH30K(D)
RESoff
82 nC
20 nC
Qgc
+
IGBT
82 nC
20 nC
C
Qgc
IES
Table 2: dV
Vge*
)
9 V
9 V
Table 1: t
Vge*
9 V
9 V
Table 3: R
400 ns
200 ns
tsw
OUT
Vth(min)
sw
CRESoff
85 pF
14 pF
/dt Driven R
Driven R
4
3
20
0.25 A
0.15 A
Goff
Iavg
Sizing
CRESoff
Gon
which is driven only by IGBT characteristics.
As an example, table 3 reports R
above mentioned disequation) for two popular IGBTs to
withstand dV
NOTICE: The above-described equations are intended
to approximate a way to size the gate resistance. A
more accurate sizing may provide more precise device
and PCB (parasitic) modelling.
14 Ω
85 Ω
85 pF
14 pF
Rtot
Gon
24 Ω
40 Ω
Sizing
Rtot
Sizing
RTOT - RDRp = 6.5
RGon → std commercial value
RTOT - RDRp = 78
RTOT - RDRp = 12.7
RTOT - RDRp = 32.5
RGoff ≤ 35
RGon → std commercial value
RGoff ≤ 4
out
/dt = 5 V/ns .
RGoff
IR21141/IR22141SSPbF
© 2009 International Rectifier
→ 8.2
→ 82
Goff
→ 10
→ 33
(calculated with the
→ 4.5 V/ns
dVout/dt
→ 5 V/ns
→ 420 ns
→ 202 ns
Tsw