VND830ASP-E STMicroelectronics, VND830ASP-E Datasheet - Page 17

• Manufacturer Part Number: VND830ASP-E
• Description: IC SSR HIGH SIDE 2CH 6A PWRSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND830ASP-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 60 mOhm
• Current - Peak Output: 10A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -

VND830ASP-E
3
3.1
3.1.1
Application information
Figure 19. Application schematic
GND protection network against reverse battery
Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.
2.
where -I
maximum rating section of the device’s datasheet.
Power dissipation in R
P
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
values. This shift varies depending on how many devices are ON in the case of several
high-side drivers sharing the same R
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize solution 2 (see
D
GND
= (-V
R
R
produces a shift (I
GND
GND
CC
GND
)
+5V
2
C
/ R
is the DC reverse ground pin current and can be found in the absolute
600 mV / I
-V
GND
CC
R
SENSE1
R
R
R
) / (-I
R
prot
prot
prot
prot
GND
S(on)max
GND
S(on)max
(when V
)
R
SENSE2
Doc ID 17605 Rev 1
CURRENT SENSE2
CURRENT SENSE1
INPUT2
INPUT1
* R
CC
GND
GND
< 0: during reverse battery situations) is:
) in the input thresholds and the status output
.
V
GND
GND
R
GND
GND
V
GND
CC
S(on)max
only)
D
GND
Section
resistor.
OUTPUT1
OUTPUT2
becomes the sum of the
Application information
3.1.2).
D
ld
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