VNQ830-E STMicroelectronics, VNQ830-E Datasheet - Page 15

IC DRIVER HISIDE QUAD 28-SOIC

VNQ830-E

Manufacturer Part Number
VNQ830-E
Description
IC DRIVER HISIDE QUAD 28-SOIC
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VNQ830-E

Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
65 mOhm
Current - Peak Output
9A
Voltage - Supply
5.5 V ~ 36 V
Mounting Type
Surface Mount
Package / Case
28-SOIC (7.5mm Width)
Supply Voltage (min)
5.5 V
Supply Current
0.012 mA
Maximum Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Device Type
High Side
Module Configuration
High Side
Peak Output Current
9A
Output Resistance
0.065ohm
Input Delay
30µs
Output Delay
30µs
Supply Voltage Range
5.5V To 36V
Driver Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

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Part Number:
VNQ830-E
Manufacturer:
ST
0
Figure 27. Maximum turn off current versus load inductance
A = Single Pulse at T
B= Repetitive pulse at T
C= Repetitive Pulse at T
Conditions:
V
CC
V
IN
100
=13.5V
10
, I
I
LM AX (A)
1
L
0.1
Jstart
Jstart
Jstart
=150ºC
Demagnetization
=100ºC
=125ºC
1
L(mH)
Values are generated with R
In case of repetitive pulses, T
each demagnetization) of every pulse must not
exceed the temperature specified above for
curves B and C.
Demagnetization
10
B
C
A
L
=0
jstart
Demagnetization
(at beginning of
VNQ830-E
100
15/21
t

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