VNQ660SP13TR STMicroelectronics, VNQ660SP13TR Datasheet
VNQ660SP13TR
Specifications of VNQ660SP13TR
Available stocks
Related parts for VNQ660SP13TR
VNQ660SP13TR Summary of contents
Page 1
... This device has four independent channels. Built- in thermal shutdown and output current limitation (a) protect the chip from over temperature and short circuit. Tube VNQ660SP Rev 5 VNQ660SP 10 1 PowerSO-10 STMicroelectronics VIPower M0-3 Order codes Tape and reel VNQ660SP13TR 1/26 www.st.com 26 ...
Page 2
Contents Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical ...
Page 3
VNQ660SP List of tables Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 4
List of figures List of figures Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 5
VNQ660SP 1 Block diagram and pin description Figure 1. Block diagram INPUT 1 INPUT 2 INPUT 3 INPUT 4 STATUS Figure 2. Configuration diagram (top view) STATUS INPUT 4 INPUT 3 INPUT 2 INPUT 1 Table 2. Suggested connections for ...
Page 6
... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document. Table 3. ...
Page 7
VNQ660SP 2.3 Electrical characteristics Values specified in this section are for 6V < V otherwise stated. Figure 3. Current and voltage conventions V IN1 V Note CCn OUTn Table 5. Power Symbol Parameter Operating ...
Page 8
Electrical specifications Table 5. Power (continued) Symbol Parameter I Off state output current V L(off1) I Off state output current V L(off2) I Off state output current L(off3) I Off state output current L(off4) 1. Per device. Table 6. Protections ...
Page 9
VNQ660SP Table 8. Switching (V Symbol t Turn-on delay time d(on) t Turn-off delay time d(off) dV /dt Turn-on voltage slope OUT (on) dV /dt Turn-off voltage slope OUT (off) Table 9. Logic inputs Symbol V Input low level voltage ...
Page 10
Electrical specifications Figure 5. Switching characteristics V OUT dV I SENSE INPUT Table 11. Truth table Conditions Normal operation Current limitation Overtemperature Undervoltage Overvoltage Output voltage > V Output current < I 10/26 80% /dt OUT (on) 10 ...
Page 11
VNQ660SP Table 12. Electrical transient requirements ISO T/R 7637/1 Test pulse ISO T/R 7637/1 Test pulse Class All functions of the device are performed as designed after exposure ...
Page 12
Electrical specifications Figure 6. Waveforms INPUT n LOAD VOLTAGE STATUS V CC INPUT n LOAD VOLTAGE STATUS INPUT n LOAD VOLTAGE STATUS n INPUT n LOAD VOLTAGE STATUS INPUT n LOAD CURRENT STATUS n ...
Page 13
VNQ660SP 2.4 Electrical characteristics curves Figure 7. Off state output current IL(off1) (µ Off state 8 Vcc= 24V Vout -50 - (ºC ) Figure ...
Page 14
Electrical specifications Figure 13 LIM case Vih (V) 4 3.75 3.5 3.25 3 2.75 2.5 2.25 2 -50 - (ºC ) Figure 15. Input high level Vih (V) 4 3.75 3.5 3.25 ...
Page 15
VNQ660SP Figure 19. Status leakage current Ilstat (µA) 0.05 0.045 Vstat= 5V 0.04 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 -50 - (ºC ) Figure 21. Status clamp voltage Vscl (V) 7.4 7.3 I ...
Page 16
Application information 3 Application information Figure 23. Application schematic + Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2. 3.1 GND protection network against reverse battery This section provides two solutions for ...
Page 17
VNQ660SP This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where I maximum on-state currents of the different devices. Please note that, if the microprocessor ground ...
Page 18
Application information 3.4 Maximum demagnetization energy (V Figure 24. Maximum turn-off current versus load inductance I LMAX (A) 100 single pulse repetitive pulse repetitive pulse ...
Page 19
VNQ660SP 4 Package and PCB thermal data 4.1 PowerSO-10 thermal data Figure 25. PowerSO-10 PC board Note: Layout condition of R thickness = 2mm, Cu thickness = 35µm, Copper areas: from minimum pad lay-out Figure 26. R ...
Page 20
Package and PCB thermal data Figure 27. Thermal impedance junction ambient single pulse ZT H (° 1000 100 10 1 0.1 0.0001 0.001 Equation 1 pulse calculation formula : where p ...
Page 21
VNQ660SP Table 13. Thermal parameters Area / island ( R11 (°C/ R10 = R12 (°C/W) R3 (°C/W) R4 (°C/W) R5 (°C/W) R6 (°C/ C11 ...
Page 22
Package and packing information 5 Package and packing information 5.1 ECOPACK® packages In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. ECOPACK® packages are lead-free. The category of Second Level Interconnect is marked on the package ...
Page 23
VNQ660SP Table 14. PowerSO-10 mechanical data Dim (1) L (1) 1. Muar ...
Page 24
Package and packing information 5.3 PowerSO-10 packing information Figure 30. PowerSO-10 suggested pad layout 14.6 - 14 Figure 32. SO-28 tape and reel shipment (suffix “TR”) Tape dimensions According to ...
Page 25
VNQ660SP 6 Revision history Table 15. Document revision history Date 22-Jun-2004 14-Jul-2004 24-Jul-2004 28-Jul-2004 03-Dec-2008 Revision 1 Initial release. 2 New revision. Minor changes. Current and voltage convention update (page 2). Configuration diagram (top view) & suggested connections for unused ...
Page 26
... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...