VNQ660SP-E STMicroelectronics, VNQ660SP-E Datasheet - Page 7

• Manufacturer Part Number: VNQ660SP-E
• Description: IC SSR HISIDE QUAD POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VNQ660SP-E

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 40 mOhm
• Current - Peak Output: 10A
• Voltage - Supply: 6 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 10A
• Output Resistance: 0.04ohm
• Input Delay: 40µs
• Output Delay: 40µs
• Supply Voltage Range: 6V To 36V
• Driver Case Style: PowerSO
• Rohs Compliant: Yes
• No. Of Pins: 10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -

VNQ660SP
2.3
Note:
Electrical characteristics
Values specified in this section are for 6V < V
otherwise stated.
Figure 3.
V
Table 5.
V
V
Symbol
Fn
V
UVhyst
OVhyst
V
V
USD
R
I
CC
OV
S
= V
ON
(1)
(1)
(1)
(1)
(1)
(1)
CCn
Operating supply
voltage
Undervoltage shutdown
Undervoltage
hysteresis
Overvoltage shutdown
Overvoltage hysteresis
On state resistance
Supply current
- V
Current and voltage conventions
Power
V
IN1
OUTn
V
Parameter
IN2
V
during reverse battery condition.
IN3
V
IN4
I
I
I
I
IN4
IN3
IN1
IN2
V
STAT
INPUT 3
INPUT 2
INPUT 4
INPUT 1
STATUS
I
9V < V
I
9V < V
I
Off State; V
V
Off State; V
V
T
On State; V
9V < V
OUT
OUT
OUT
j
IN
IN
= 25°C
= V
= V
= 1A; T
= 1A;T
= 1A; V
I
STAT
CC
CC
CC
V
OUT
OUT
CC
Test conditions
< 18V
< 18V
< 18V
= 0V
= 0V;
OUTPUT 1
j
CC
CC
CC
OUTPUT 2
OUTPUT 4
OUTPUT 3
j
CC
= 150°C
CC
= 25°C
GND
= 13.5V;
= 13.5V;
= 13V; V
= 6V
< 24V; -40°C < T
I
GND
IN
I
I
I
I
OUT1
= 3.25V;
OUT2
V
OUT3
OUT4
OUT4
V
OUT3
V
F1
V
(*)
OUT2
j
Electrical specifications
< 150°C, unless
V
OUT1
I
Min.
0.25
S
3.5
0.2
36
6
Typ. Max. Unit
4.6
V
13
40
85
12
12
6
CC
100
130
36
50
40
25
12
6
1
m
m
m
mA
µA
µA
7/26
V
V
V
V
V