BUK1M200-50SDLD,11 NXP Semiconductors, BUK1M200-50SDLD,11 Datasheet - Page 7
![TOPFET QUAD 50V 20-SOIC](/photos/6/52/65266/568-20-soic_sot163-1_sml.jpg)
BUK1M200-50SDLD,11
Manufacturer Part Number
BUK1M200-50SDLD,11
Description
TOPFET QUAD 50V 20-SOIC
Manufacturer
NXP Semiconductors
Series
TOPFET™r
Type
Low Sider
Datasheet
1.BUK1M200-50SDLD11.pdf
(14 pages)
Specifications of BUK1M200-50SDLD,11
Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
150 mOhm
Current - Peak Output
1.3A
Mounting Type
Surface Mount
Package / Case
20-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Other names
934057352115
BUK1M200-50SDLDT/R
BUK1M200-50SDLDT/R
BUK1M200-50SDLDT/R
BUK1M200-50SDLDT/R
Philips Semiconductors
[4]
[5]
[6]
[7]
9397 750 10956
Product data
Fig 5. Normalized drain-source on-state resistance
Fig 7. Output characteristics; drain current as a
The TOPFET switches off to protect itself when one of the overload thresholds is exceeded. It remains latched off until reset by the
input.
Power threshold for protection to operate.
To reset the latched state, the input-source voltage is reduced from 5 V to 1 V.
Trip time t
T
j
2.5
1.5
0.5
1.6
(A)
1.2
0.8
0.4
I D
= 25 C; t
a
2
1
0
0
factor as a function of junction temperature.
function of drain-source voltage; typical values.
-50
a
0
(trip)
=
----------------------------- -
R
p
varies with overload dissipation P
DSon 25 C
= 300 s
R
DSon
0
10
50
V
20
IS
= 7 V
100
6 V
5 V
4 V
V DS (V)
T j ( C)
03pa71
03pa74
OV
150
according to the formula t
30
Rev. 01 — 02 April 2003
Fig 6. Drain-source on-state resistance as a function
Fig 8. Transfer characteristics; drain current as a
R DSon
(m )
T
T
j
j
500
375
250
125
1.8
I D
(A)
1.2
0.6
= 25 C; I
= 25 C; V
0
0
of input-source voltage; typical values.
function of input-source voltage; typical values.
(trip)
0
0
= t
BUK1M200-50SDLD
d(sc)
D
DS
= 100 mA; t
/ [P
= 10 V; t
2
2
OV
/ P
p
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
OV(th)
p
= 300 s
= 300 s
4
4
Quad channel TOPFET™
- 1]
6
6
V IS (V)
V IS (V)
03pa73
03pa75
8
8
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