BUK1M200-50SDLD,11 NXP Semiconductors, BUK1M200-50SDLD,11 Datasheet - Page 7

• Manufacturer Part Number: BUK1M200-50SDLD,11
• Description: TOPFET QUAD 50V 20-SOIC
• Manufacturer: NXP Semiconductors
• Series: TOPFET™r
• Type: Low Sider

Specifications of BUK1M200-50SDLD,11

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 150 mOhm
• Current - Peak Output: 1.3A
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Other names: 934057352115; BUK1M200-50SDLDT/R; BUK1M200-50SDLDT/R

Philips Semiconductors
[4]
[5]
[6]
[7]
9397 750 10956
Product data
Fig 5. Normalized drain-source on-state resistance
Fig 7. Output characteristics; drain current as a
The TOPFET switches off to protect itself when one of the overload thresholds is exceeded. It remains latched off until reset by the
input.
Power threshold for protection to operate.
To reset the latched state, the input-source voltage is reduced from 5 V to 1 V.
Trip time t
T
j
2.5
1.5
0.5
1.6
(A)
1.2
0.8
0.4
I D
= 25 C; t
a
2
1
0
0
factor as a function of junction temperature.
function of drain-source voltage; typical values.
-50
a
0
(trip)
=
----------------------------- -
R
p
varies with overload dissipation P
DSon 25 C
= 300 s
R
DSon
0
10
50
V
20
IS
= 7 V
100
6 V
5 V
4 V
V DS (V)
T j ( C)
03pa71
03pa74
OV
150
according to the formula t
30
Rev. 01 — 02 April 2003
Fig 6. Drain-source on-state resistance as a function
Fig 8. Transfer characteristics; drain current as a
R DSon
(m )
T
T
j
j
500
375
250
125
1.8
I D
(A)
1.2
0.6
= 25 C; I
= 25 C; V
0
0
of input-source voltage; typical values.
function of input-source voltage; typical values.
(trip)
0
0
= t
BUK1M200-50SDLD
d(sc)
D
DS
= 100 mA; t
/ [P
= 10 V; t
2
2
OV
/ P
p
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
OV(th)
p
= 300 s
= 300 s
4
4
Quad channel TOPFET™
- 1]
6
6
V IS (V)
V IS (V)
03pa73
03pa75
8
8
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