VN770P13TR STMicroelectronics, VN770P13TR Datasheet - Page 4

• Manufacturer Part Number: VN770P13TR
• Description: IC RELAY SSR QUAD SMART 28-SSOP
• Manufacturer: STMicroelectronics
• Type: H Bridger

Specifications of VN770P13TR

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 160 mOhm
• Current - Output / Channel: 9A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (7.5mm Width)
• Supply Current: 4 mA
• Maximum Operating Temperature: 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Peak Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VN770P
4/11
PROTECTION CIRCUITS
DUAL HIGH SIDE SWITCH
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a a small resistor between pin 2 (GND) and
ground. The suggested resistance value is about
150 . In any case the maximum voltage drop on
this resistor should not overcome 0.5V.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the
device ground (see application circuit in fig. 3),
which becomes the common signal GND for the
whole control board avoiding shift of V
V
LOW SIDE SWITCHES
The devices integrate:
-
TRUTH TABLE (for Dual high-side switch only)
NOTE: The low-side switches have the fault feedback which can be detected by monitoring the voltage at the input pins.
L = Logic LOW, H = Logic HIGH, X = Don’t care
Normal Operation
Under-voltage
T hermal Shutdown
O pen Load
O utput Shorted to V
stat
OVERVOLTAGE
internally set at 42V, along with the rugged
avalanche
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
.
characteristics
CC
CLAMP
Channel 1
Channel 2
Channel 1
Channel 2
Channel 1
Channel 2
of
PROTECTION:
the
ih
, V
INPUT 1
Power
il
H
H
X
H
X
H
X
H
X
L
L
L
L
L
L
and
INPUT 2
-
-
Additional features of these devices are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increase in R
inductive loads.
OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150
restarted when the chip temperature falls
below 135
STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
H
H
X
X
H
X
H
X
H
L
L
L
L
L
L
SO URCE 1 SOURCE 2 DIAG NO STIC
o
C.
H
H
H
H
H
X
X
X
L
L
L
L
L
L
L
o
C. The device is automatically
H
H
X
X
H
X
H
H
L
L
L
L
L
L
L
DS(on)
).
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
.