L6599DTR STMicroelectronics, L6599DTR Datasheet - Page 30
L6599DTR
Manufacturer Part Number
L6599DTR
Description
IC RESONANT CONVRTR CTRLR 16SOIC
Manufacturer
STMicroelectronics
Type
Phase Shift Resonant Controllerr
Datasheet
1.L6599DTR.pdf
(36 pages)
Specifications of L6599DTR
Applications
Resonant Converter Controller
Voltage - Supply
8.85 V ~ 16 V
Current - Supply
3.5mA
Operating Temperature
0°C ~ 105°C
Mounting Type
Surface Mount
Package / Case
16-SOIC (3.9mm Width)
Number Of Outputs
Single Output
Output Current
800 mA
Switching Frequency
500 KHz
Operating Supply Voltage
8.85 V to 16 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
For Use With
497-10542 - BOARD EVAL BASED ON L6599497-8429 - BOARD ADAPTER L6599/STP12NM50N497-8265 - BOARD EVAL BASED ON L6599497-5857 - DEMO BOARD FOR L6599497-5856 - DEMO BOARD FOR L6599497-5497 - EVAL BOARD FOR L6599497-5496 - EVAL BOARD FOR L6599
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Input
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-6156-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
L6599DTR
Manufacturer:
ST
Quantity:
15 600
Part Number:
L6599DTR
Manufacturer:
ST
Quantity:
20 000
Application information
30/36
This concern applies to converters designed with a high resonance frequency (indicatively,
> 150 kHz), so that they run at high frequency also at full load. Otherwise, the converter will
run at high frequency only at light load, where the current flowing in the MOSFETs of the
half-bridge leg is lower, so that, generally, an R
to check this point anyway and the following equation is useful to compute the drop on the
bootstrap driver:
where Q
bootstrap DMOS (150, typ.) and T
about half the switching period minus the dead time T
a total gate charge of 30 nC, the drop on the bootstrap driver is about 3 V at a switching
frequency of 200 kHz:
If a significant drop on the bootstrap driver is an issue, an external ultra-fast diode can be
used, thus saving the drop on the R
g
is the gate charge of the external power MOS, R
V
Drop
V
Drop
=
I
=
Ch
------------------------------------------------------ - 150
2.5 10
arg
charge
e
⋅
DS(on)
r
(
DS
30 10
–
)ON
is the ON-time of the bootstrap driver, which equals
6
⋅
–
of the internal DMOS.
0.3 10
+
–
9
V
⋅
DS(on)
F
=
–
------------------- - R
T
6
Ch
Q
rise is not an issue. However, it is wise
D
arg
g
. For example, using a MOSFET with
+
e
0.6
DS(on)
(
DS
=
)ON
2.7V
+
is the on-resistance of the
V
F
L6599