L6599N STMicroelectronics, L6599N Datasheet - Page 30

IC RESONANT CONVERTR CTRLR 16DIP

L6599N

Manufacturer Part Number
L6599N
Description
IC RESONANT CONVERTR CTRLR 16DIP
Manufacturer
STMicroelectronics
Type
Phase Shift Resonant Controllerr
Datasheet

Specifications of L6599N

Applications
Resonant Converter Controller
Voltage - Supply
8.85 V ~ 16 V
Current - Supply
3.5mA
Operating Temperature
0°C ~ 105°C
Mounting Type
Through Hole
Package / Case
16-DIP (0.300", 7.62mm)
Number Of Pwm Outputs
1
Switching Freq
500KHz
Operating Supply Voltage (max)
16V
Output Current
800A
Operating Temperature Classification
Automotive
Mounting
Through Hole
Pin Count
16
Package Type
PDIP
Number Of Outputs
Single Output
Switching Frequency
500 KHz
Operating Supply Voltage
8.85 V to 16 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Supply Voltage Range
8.85V To 16V
Digital Ic Case Style
DIP
No. Of Pins
16
Operating Temperature Range
-40°C To +150°C
Svhc
No SVHC (15-Dec-2010)
Base Number
6599
Device Type
Power
Rohs Compliant
Yes
For Use With
497-10542 - BOARD EVAL BASED ON L6599497-8429 - BOARD ADAPTER L6599/STP12NM50N497-8265 - BOARD EVAL BASED ON L6599497-5857 - DEMO BOARD FOR L6599497-5856 - DEMO BOARD FOR L6599497-5497 - EVAL BOARD FOR L6599497-5496 - EVAL BOARD FOR L6599
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Input
-
Lead Free Status / Rohs Status
Compliant
Other names
497-5723
L6599NR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
L6599N
Manufacturer:
TI
Quantity:
15 700
Part Number:
L6599N
Manufacturer:
ST
0
Part Number:
L6599N/PB-FREE
Manufacturer:
ST
0
Application information
30/36
This concern applies to converters designed with a high resonance frequency (indicatively,
> 150 kHz), so that they run at high frequency also at full load. Otherwise, the converter will
run at high frequency only at light load, where the current flowing in the MOSFETs of the
half-bridge leg is lower, so that, generally, an R
to check this point anyway and the following equation is useful to compute the drop on the
bootstrap driver:
where Q
bootstrap DMOS (150, typ.) and T
about half the switching period minus the dead time T
a total gate charge of 30 nC, the drop on the bootstrap driver is about 3 V at a switching
frequency of 200 kHz:
If a significant drop on the bootstrap driver is an issue, an external ultra-fast diode can be
used, thus saving the drop on the R
g
is the gate charge of the external power MOS, R
V
Drop
V
Drop
=
I
=
Ch
------------------------------------------------------ - 150
2.5 10
arg
charge
e
DS(on)
r
(
DS
30 10
)ON
is the ON-time of the bootstrap driver, which equals
6
of the internal DMOS.
0.3 10
+
9
V
DS(on)
F
=
------------------- - R
T
6
Ch
Q
rise is not an issue. However, it is wise
D
arg
g
. For example, using a MOSFET with
+
e
0.6
DS(on)
(
DS
=
)ON
2.7V
+
is the on-resistance of the
V
F
L6599

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