NCP1380CDR2G ON Semiconductor, NCP1380CDR2G Datasheet - Page 14
NCP1380CDR2G
Manufacturer Part Number
NCP1380CDR2G
Description
IC PWM FLYBCK ISO CM 8SOIC
Manufacturer
ON Semiconductor
Datasheet
1.NCP1380ADR2G.pdf
(26 pages)
Specifications of NCP1380CDR2G
Pwm Type
Current Mode
Number Of Outputs
1
Frequency - Max
65kHz
Voltage - Supply
9.4 V ~ 28 V
Buck
No
Boost
No
Flyback
Yes
Inverting
No
Doubler
No
Divider
No
Cuk
No
Isolated
Yes
Operating Temperature
-40°C ~ 125°C
Package / Case
8-SOIC (3.9mm Width)
Frequency-max
65kHz
Mounting Style
SMD/SMT
Operating Supply Voltage
- 0.3 V to + 28 V
Supply Current
+/- 30 mA
Maximum Operating Temperature
+ 125 C
Fall Time
25 ns
Minimum Operating Temperature
- 40 C
Rise Time
40 ns
Synchronous Pin
No
Topology
Quasi-Resonant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Duty Cycle
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NCP1380CDR2G
Manufacturer:
ON Semiconductor
Quantity:
2 000
voltage of the auxiliary winding of the transformer. A
valley is detected when the voltage on pin 1 crosses
down the 55 mV internal threshold. When a valley is
The valley detection is done by monitoring the
La ux
ZCD
FB
Ct
VDD
Rpullup
ICt
10 V
ES D
DRV
VDD
Figure 26. Operating Valley According to FB Voltage
Ct setpoint
Vth
VALLEY DETECTION AND SELECTION
+
−
3 us puls e
Figure 27. Valley Detection Circuit
leakage
blanking
+
−
Discharge
http://onsemi.com
Ct
V FB
V FBth
14
detected, an internal counter is incremented. The
operating valley (1
the FB voltage as shown by Figure 26.
de m a g
LOGIC BLOCK
Tim e Out
VDD
st
, 2
nd
CS comparator
, 3
rd
or 4
th
) is determined by
R
S
Q
Q
DRV