L6706TR STMicroelectronics, L6706TR Datasheet - Page 12

IC CTLR SGL PHASE VR11.1 40VFQFP

L6706TR

Manufacturer Part Number
L6706TR
Description
IC CTLR SGL PHASE VR11.1 40VFQFP
Manufacturer
STMicroelectronics
Datasheet

Specifications of L6706TR

Applications
Controller, Intel VR11.1
Voltage - Input
3.7 ~ 12 V
Number Of Outputs
1
Voltage - Output
0.03 ~ 1.6 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
40-VFQFN, 40-VFQFPN
Output Current
2 A
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
0 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8975-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
L6706TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
L6706TR
Manufacturer:
ST
0
Part Number:
L6706TR /L6706
Manufacturer:
ST
0
Electrical specifications
Table 5.
12/47
Differential current sensing and offset
Gate drivers
Protections
Programmable
t
t
RISE UGATE
RISE LGATE
K
Pre-OVP
K
V
Symbol
V
I
R
V
R
OFFSET
I
I
IOFFSET
IDROOP
OFFSET
UGATE
LGATE
OCSET
OVP
OVP
SSEND
UGATE
UVP
LGATE
SR
Electrical characteristics (continued)
EA slew-rate
OCSET pin voltage
Droop current deviation from
nominal value
Offset current accuracy
OFFSET current range
OFFSET pin bias
High side rise time
High side source current
High side sink resistance
Low side rise time
Low side source current
Low side sink resistance
Over voltage protection
(VSEN rising)
I
Comparator offset voltage
Preliminary over voltage
protection
Under voltage threshold
SS_END voltage low
OVP
current
Parameter
BOOT-PHASE = 12 V
COMP = 10 pF to SGND
Rg = 1 kΩ; I
I
I
BOOT-PHASE = 12 V;
C
BOOT-PHASE = 12 V
VCCDR = 12 V;
C
VCCDR = 12 V
VCCDR = 12 V
Before V
Above VID (after TD
OVP = SGND
OVP = 1.800 V
UVLO
VCC> UVLO
VSEN rising
Hysteresis
VSEN falling; below VID
I = -4 mA
OFFSET
OFFSET
Doc ID 15698 Rev 2
UGATE
LGATE
OVP
to PGND = 5.6 nF
to PHASE = 3.3 nF
= 50 μA to 250 μA
= 0 to 250 μA
BOOT
< VCC < UVLO
Test conditions
DROOP
VCC
and OUTEN = SGND
= 25 μA;
3
)
VCC
1.120 1.260 1.400
1.750 1.800 1.850
Min.
150
550
-20
20
-2
-5
0
1.240
Typ.
1.24
175
350
600
1.5
1.8
1.2
25
20
25
22
2
0
-
-
1.300
Max. Unit
250
200
650
0.4
+2
24
20
5
L6706
V/μs
mV
mV
mV
mV
mV
μA
μA
μA
ns
ns
%
Ω
Ω
V
A
A
V
V
V

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