MAX8506ETE+ Maxim Integrated Products, MAX8506ETE+ Datasheet - Page 2

• Manufacturer Part Number: MAX8506ETE+
• Description: IC DC-DC CONV PWM 16-TQFN
• Manufacturer: Maxim Integrated Products

Specifications of MAX8506ETE+

• Applications: Converter, WCDMA
• Voltage - Input: 2.6 ~ 5.5 V
• Number Of Outputs: 1
• Voltage - Output: 0.4 ~ 3.4 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TQFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
BATTP, BATT, OUT,
PGND to GND .......................................................-0.3V to +0.3V
BATT to BATTP......................................................-0.3V to +0.3V
OUT, COMP, REF to GND.......................-0.3V to (V
LX Current (Note 1) ...............................................................1.6A
OUT Current (Note 1)............................................................3.2A
Output Short-Circuit Duration.....................................Continuous
PWM Step-Down DC-DC Converters with 75m Ω Ω
Bypass FET for WCDMA and cdmaOne Handsets
ELECTRICAL CHARACTERISTICS
(V
C
Note 1: LX has internal clamp diodes to PGND and BATT. Applications that forward bias these diodes should take care not to exceed
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2
Input BATT Voltage
Undervoltage Lockout Threshold
Undervoltage Lockout Hysteresis
Quiescent Current
Quiescent Current in Dropout
Shutdown Supply Current
OUT Voltage Accuracy
OUT Input Resistance
REFIN Input Current
REFIN to OUT Gain
Reference Voltage
Reference Load Regulation
Reference Bypass Capacitor
FB Voltage Accuracy
FB Input Current
P-Channel On-Resistance
N-Channel On-Resistance
HP/Bypass P-Channel
On-Resistance
REF
BATT
FB to GND ...........................................................-0.3V to +6V
_______________________________________________________________________________________
= 0.22µF, T
= V
the IC’s package power-dissipation limits.
PARAMETER
BATTP
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
= 3.6V, SHDN = SKIP = BATT, HP = GND, V
SHDN, SKIP, HP, REFIN,
V
SKIP = GND (normal mode)
SKIP = BATT, 1MHz switching
HP = BATT
SHDN = GND
V
V
V
V
MAX8506
MAX8507
MAX8506
MAX8507
10µA < I
FB = COMP (MAX8508)
V
I
I
I
LX
LX
OUT
BATT
REFIN
REFIN
REFIN
REFIN
FB
= 180mA
= 180mA
= 1V (MAX8508)
= 180mA, V
rising
= 1.932V, I
= 0.426V, I
= 1.700V, I
= 0.375V, I
REF
< 100µA
BATT
BATT
OUT
OUT
OUT
OUT
+ 0.3V)
V
V
V
V
CONDITIONS
= 3.6V
BATT
BATT
BATT
BATT
= 0 to 600mA (MAX8506)
= 0 to 30mA (MAX8506)
= 0 to 600mA (MAX8507)
= 0 to 30mA (MAX8507)
= 3.6V
= 2.6V
= 3.6V
= 2.6V
Continuous Power Dissipation (T
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
REFIN
16-Pin Thin QFN (derate 16.9mW/°C above +70°C) ...1.349W
= 1.932V (MAX8506), V
A
= +25°C.) (Note 2)
0.7275
2.150
3.375
0.740
3.375
0.740
1.225
MIN
250
275
2.6
0.1
-1
A
= +70°C)
REFIN
0.075
1750
TYP
2.35
3.40
0.75
3.40
0.75
1.76
2.00
1.25
0.22
0.75
0.03
0.35
180
775
485
535
0.1
0.1
2.5
0.4
0.5
0.3
40
= 1.70V (MAX8507),
0.7725
2.575
3.425
0.760
3.425
0.760
1.275
0.175
0.825
0.110
MAX
1000
250
5.5
8.5
0.5
+1
5
UNITS
mV
V/V
mV
µA
µA
µA
kΩ
µA
µF
µA
Ω
Ω
Ω
V
V
V
V
V