HCNW4503-000E Avago Technologies US Inc., HCNW4503-000E Datasheet - Page 10

• Manufacturer Part Number: HCNW4503-000E
• Description: OPTOCOUPLER T-OUT 1MBD 8DIP WIDE
• Manufacturer: Avago Technologies US Inc.

Specifications of HCNW4503-000E

• Input Type: DC
• Package / Case: 8-DIP (0.400", 10.16mm)
• Voltage - Isolation: 3750Vrms
• Number Of Channels: 1, Unidirectional
• Current - Output / Channel: 8mA
• Data Rate: 1Mbps
• Propagation Delay High - Low @ If: 200ns @ 16mA
• Current - Dc Forward (if): 25mA
• Output Type: Open Collector
• Mounting Type: Through Hole
• Isolation Voltage: 5000 Vrms
• Minimum Forward Diode Voltage: 1.45 V
• Output Device: Transistor With Base
• Configuration: 1 Channel
• Current Transfer Ratio: 50 %
• Maximum Baud Rate: 1 MBps
• Maximum Forward Diode Voltage: 1.85 V
• Maximum Reverse Diode Voltage: 3 V
• Maximum Input Diode Current: 25 mA
• Maximum Power Dissipation: 100 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Reverse Breakdown Voltage: 3V
• Forward Voltage: 1.85V
• Forward Current: 25mA
• Package Type: PDIP W
• Collector Current (dc) (max): 8mA
• Power Dissipation: 100mW
• Pin Count: 8
• Mounting: Through Hole
• Operating Temp Range: -55C to 85C
• Operating Temperature Classification: Industrial
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 16mA
• Output Voltage: 20V
• Opto Case Style: DIP
• No. Of Pins: 8
• Ctr Max: 50%
• Ctr Min: 19%
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1620-5

Electrical Specifications (DC)
Over recommended temperature (T
*For JEDEC registered parts.
**All typicals at T
10
Parameter
Current
Transfer Ratio
Logic Low
Output Voltage
Logic High
Output Current
Logic Low
Supply Current
Logic High
Supply Current
Input Forward
Input Reverse
Breakdown
Voltage
Temperature
Coefficient of
Forward Volt-
age
Input
Capacitance
Transistor DC
Current Gain
A
= 25°C.
Voltage
Symbol
CTR*
BV
I
∆V
I
∆T
V
I
CCH
V
C
h
OH
CCL
OL
F
FE
IN
R
*
F
*
A
*
*
/
HCPL-0500
HCPL-2502
HCPL-0501
HCPL-0500
HCPL-2502
HCPL-0501
HCNW135
HCNW136
HCNW135
HCNW136
Widebody
Widebody
Widebody
Widebody
Widebody
8-Pin DIP
8-Pin DIP
8-Pin DIP
8-Pin DIP
8-Pin DIP
6N135
6N136
6N135
6N136
Device
SO-8
SO-8
SO-8
SO-8
SO-8
A
= 0°C to 70°C) unless otherwise specified. See note 13.
1.45
1.35
Min. Typ.**
15
15
19
15
7
5
5
3
0.003
0.01
0.02
1.68
-1.6
-1.9
150
130
180
160
0.1
0.1
0.1
0.1
1.5
18
19
25
24
25
50
60
90
Max.
1.85
1.95
200
0.4
0.5
0.4
0.5
0.5
1.7
1.8
50
22
50
50
1
1
2
mV/°C I
Units
µA
µA
µA
pF
%
V
V
V
I
T
T
T
T
T
T
T
T
T
T
F
R
I
A
A
A
A
A
A
A
A
A
A
= 16 mA
R
= 10 µA
I
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 100
F
µA
V
V
= 16 mA, V
f = 1 MHz, V
V
V
O
O
O
O
= 0.4 V, I
= 0.4 V, I
= 5 V, I
= 5 V, I
V
CC
V
V
V
= 15 V
Test Conditions
O
O
O
I
I
I
I
O
O
V
I
I
O
O
O
O
B
B
V
V
V
V
V
V
I
V
= V
F
F
= V
= V
O
F
O
= 3 mA
= 3 mA
= 20 µA
= 20 µA
= 1.1 mA
= 0.8 mA
= 3.0 mA
= 2.4 mA
CC
O
O
O
O
O
O
= 16 mA
= 16 mA
= 0 mA,
F
= Open,
= Open,
= 0.4 V
= 0.5 V
= 0.4 V
= 0.5 V
= 0.4 V
= 0.5 V
= 0 V
CC
= 15 V
CC
CC
= 5.5 V
= 15 V
= 15 V
I
I
V
V
F
F
I
F
CC
CC
= 16 mA,
= 16 mA,
= 0 mA
= 4.5 V
= 4.5 V
1, 2,
Fig.
13
13
4
7
3
5, 11
Note