TLP504A-2(GB,F) Toshiba, TLP504A-2(GB,F) Datasheet - Page 62

• Manufacturer Part Number: TLP504A-2(GB,F)
• Description: PHOTOCPLR QUAD TRANS-OUT 16-DIP
• Manufacturer: Toshiba

Specifications of TLP504A-2(GB,F)

• Number Of Channels: 4
• Input Type: DC
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (min): 100% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 55V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 50mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Maximum Collector Emitter Voltage: 55 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 2500 Vrms
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Maximum Fall Time: 3 us
• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 5 V
• Maximum Rise Time: 2 us
• Output Device: Transistor
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP504A-2GBF

9
The above operating life data are estimates extrapolated from long-term light output degradation over a single wafer lot and are
shown as reference only. Operating conditions exceeding the maximum ratings are not guaranteed.
3
3
10000000
1000000
GaA As (DH) LED Projected Light Output Degradation Data
GaA As (DH) LED Projected Operating Life Data
140
120
100
140
120
100
Device Degradation
100000
80
60
40
20
80
60
40
20
10000
0
0
1000
1
1
100
227
2.0
I
I
I
I
I
Failure criteria light output degradation Δ P O < –50%
F
F
F
F
F
150
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
10
Test conditions: I
Test conditions: I
100
85
3.0
60
100
100
Test time (h)
Test time (h)
F
F
25
= 50 mA, Ta = 40°C
= 10 mA, Ta = 40°C
1000
1000
0
4.0
I
F
Ambient Temperature (°C)
= 10 mA
I
I
I
I
–30
F
F
F
F
= 20 mA
= 30 mA
= 40 mA
= 50 mA
Projected F50%
operating life
10000
10000
Projected F0.1%
operating life
X-3σ
–50
X-3σ
1 / K(×10
X
X
100000
100000
–73
5.0
−3
)
62
10000000
1000000
140
120
100
100000
80
60
40
20
10000
0
1000
100
1
227
2.0
I
I
I
I
I
150
F
F
F
F
F
Failure criteria light output degradation Δ P O < –30%
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
Test conditions: I
100
85
3.0
60
100
Test time (h)
F
25
= 20 mA, Ta = 40°C
1000
0
4.0
Ambient Temperature (°C)
I
I
I
I
I
F
F
F
F
F
–30
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
Projected F0.1%
operating life
Projected F50%
operating life
10000
X-3σ
–50
X
1 / K(×10
100000
–73
5.0
−3
)