NCV7708AGEVB ON Semiconductor, NCV7708AGEVB Datasheet - Page 4

• Manufacturer Part Number: NCV7708AGEVB
• Description: EVAL BOARD FOR NCV7708AG
• Manufacturer: ON Semiconductor

Specifications of NCV7708AGEVB

• Design Resources: NCV7708 EVB BOM NCV7708GEVB Gerber Files NCV7708 EVB Schematic
• Main Purpose: Power Management, Half H-Bridge Driver (Internal FET)
• Embedded: No
• Utilized Ic / Part: NCV7708
• Primary Attributes: 6 Channel High & Low Side Internal Switch
• Secondary Attributes: SPI Interface
• Silicon Manufacturer: On Semiconductor
• Silicon Core Number: NCV7708A
• Kit Application Type: Driver - Bridge
• Application Sub Type: Half Bridge Driver
• Development Tool Type: Hardware - Eval/Demo Board
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: NCV7708AG
• Other names: NCV7708AGEVBOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 1−oz copper, 240 mm
2. 1−oz copper, 986 mm
MAXIMUM RATINGS
SOIC 28−pin Package
Junction−to−Lead (psi−JL8, Y
Junction−to−Ambient (R
Power Supply Voltage (VS1, VS2)
Output Pin OUTHx
Output Pin OUTLx
Pin Voltage (Logic Input pins, SI, SCLK, CSB, SO, EN, V
Output Current (OUTL1, OUTL2, OUTL3, OUTL4, OUTL5, OUTL6, OUTH1, OUTH2, OUTH3, OUTH4,
OUTH5, OUTH6)
Electrostatic Discharge, Human Body Model, VS1, VS2, OUTx
Electrostatic Discharge, Human Body Model, all other pins
Electrostatic Discharge, Machine Model
Operating Junction Temperature
Storage Temperature Range
Moisture Sensitivity Level
Electrostatic Discharge, Charged Device Model
(DC)
(AC), t < 500 ms, Ivsx > −2 A
(DC)
(AC – inductive clamping)
(DC)
(AC), t < 500 ms, IOUTLx > −2 A
(AC Inductive Clamping)
(DC) Vds = 12 V
(DC) Vds = 20 V
(DC) Vds = 40 V
(AC) Vds = 12 V, (50 ms pulse, 1 s period)
(AC) Vds = 20 V, (50 ms pulse, 1 s period)
(AC) Vds = 40 V, (50 ms pulse, 1 s period)
MAX 235°C Processing
qJA
2
2
copper area, 0.062″ thick FR4.
copper area, 0.062″ thick FR4.
Thermal Parameters
, q
JA
JL8
)
) or Pins 6−9, 20−23
Rating
CC
http://onsemi.com
)
4
min−pad board
(Note 1)
10
73
Test Conditions
Typical Value
1″−pad board
(Note 2)
11
56
−0.25 to 0.25
−0.3 to 7.0
−1.5 to 1.5
−0.7 to 0.7
−2.0 to 2.0
−0.9 to 0.9
−0.3 to 0.3
−40 to 150
−55 to 150
−0.3 to 40
−0.3 to 40
−0.3 to 34
Value
−1.0
−8.0
−1.0
200
4.0
2.0
1.0
48
3
°C/W
°C/W
Unit
kV
kV
kV
°C
°C
V
V
V
V
A
V
−