NCV7708AGEVB ON Semiconductor, NCV7708AGEVB Datasheet - Page 6

• Manufacturer Part Number: NCV7708AGEVB
• Description: EVAL BOARD FOR NCV7708AG
• Manufacturer: ON Semiconductor

Specifications of NCV7708AGEVB

• Design Resources: NCV7708 EVB BOM NCV7708GEVB Gerber Files NCV7708 EVB Schematic
• Main Purpose: Power Management, Half H-Bridge Driver (Internal FET)
• Embedded: No
• Utilized Ic / Part: NCV7708
• Primary Attributes: 6 Channel High & Low Side Internal Switch
• Secondary Attributes: SPI Interface
• Silicon Manufacturer: On Semiconductor
• Silicon Core Number: NCV7708A
• Kit Application Type: Driver - Bridge
• Application Sub Type: Half Bridge Driver
• Development Tool Type: Hardware - Eval/Demo Board
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: NCV7708AG
• Other names: NCV7708AGEVBOS

ELECTRICAL CHARACTERISTICS
(−40°C < T
OUTPUTS
Current Limit (OUTLx)
Under Load Detection Threshold (OUTLx)
Under Load Detection Threshold (OUTHx)
Under Load Detection Delay Time
Timing Specifications
3. Thermal characteristics are not subject to production test.
4. For temperatures above 85°C, refer to graphs for VSx and V
5. Refer to “Typical High−Side Negative Clamp Voltage” graph on page 13.
6. Not production tested.
Low−Side Clamping Voltage
Low−Side Clamping Energy
Logic Inputs (EN, SI, SCLK, CSB)
Logic Output (SO)
Power Transistor Body Diode Forward Voltage
High−Side Clamping Voltage (Note 5)
Input Threshold − High
Input Threshold
Input Hysteresis
Input Pulldown Current (EN, SI, SCLK)
Sleep Mode (SI, SCLK)
Input Pullup Current (CSB)
Sleep Mode
Input Capacitance (Note 6)
Output High
Output Low
Tri−state Leakage
Tri−state Input Capacitance (Note 6)
High Side Turn On Time
High Side Turn Off Time
Low Side Turn On Time
Low Side Turn Off Time
High Side Rise Time
High Side Fall Time
Low Side Rise Time
Low Side Fall Time
Non−Overlap Time
Non−Overlap Time
J
< 150°C, 5.5 V < VSx < 40 V, 3 V < V
Characteristic
− Low
CC
V
V
V
V
I(OUTLx) = 50 mA
I(OUTLx) = 0.6 A, T
I
I(OUTHx) = −50 mA
EN = SI = SCLK = V
EN = 0, SI = SCLK = V
CSB = 0 V, EN = V
EN = 0 V, V
I
I
CSB = V
CSB = V
Vs = 13.2 V, R
Vs = 13.2 V, R
Vs = 13.2 V, R
Vs = 13.2 V, R
Vs = 13.2 V, R
Vs = 13.2 V, R
Vs = 13.2 V, R
Vs = 13.2 V, R
High Side Turn Off To Low Side Turn On
Low Side Turn Off To High Side Turn On
CC
CC
CC
CC
F
out
out
< 5.25 V, EN = V
= 500 mA
= 5 V, Vsx = 13.2 V
= 5 V, Vsx = 13.2 V
= 5 V, Vsx = 13.2 V
= 5 V, Vsx = 13.2 V
= 1 mA
= −1.6 mA
http://onsemi.com
CC
CC
Test Conditions
, 0 V < SO < V
, 0 V < V
CC
CC
load
load
load
load
load
load
load
load
= 5 V
Sleep Current vs. Temperature on page 13.
6
CC
= 25 W
= 25 W
= 25 W
= 25 W
= 25 W
= 25 W
= 25 W
= 25 W
A
CC
= 25°C, DC = 0.5%
CC
, unless otherwise specified)
CC
CC
< 5.25 V
CC
V
CC
−100
Min
−15
200
100
−50
−10
2.0
3.0
5.0
1.5
2.5
34
30
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
– 1.0
V
CC
−6.0
Typ
350
300
−10
−50
3.0
8.0
0.9
0.2
7.5
3.0
6.5
2.0
4.0
2.0
1.0
1.0
10
50
10
10
−
−
−
−
−
−
−
−
– 0.7
Max
−2.0
−0.7
−5.0
600
600
100
−10
5.0
1.3
0.4
6.0
5.0
8.0
3.0
2.0
3.0
15
48
15
70
50
15
10
15
13
13
−
−
−
−
%V
Unit
mA
mA
mV
mJ
mA
mA
pF
mA
pF
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
A
V
V
V
V
V
CC