STEVAL-ISB001V1 STMicroelectronics, STEVAL-ISB001V1 Datasheet - Page 6

• Manufacturer Part Number: STEVAL-ISB001V1
• Description: BATTERY CHARGER CELL PHONE
• Manufacturer: STMicroelectronics
• Type: Battery Managementr

Specifications of STEVAL-ISB001V1

• Main Purpose: Power Management, Battery Charger
• Embedded: No
• Utilized Ic / Part: STD1LNK60Z
• Primary Attributes: 1 Cell, 4.7V @ 400mA Out, CV/CC, 85 ~ 265VAC Input, 1.9W
• Secondary Attributes: >65% Efficient, 51 ~ 91mW Standby Input Power
• Input Voltage: 85 V to 265 V
• Output Voltage: 5 V
• Product: Power Management Modules
• Silicon Manufacturer: ST Micro
• Silicon Core Number: STD1LNK60Z-1
• Kit Application Type: Power Management - Battery
• Application Sub Type: Battery Charger
• Kit Contents: Board
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: STD1LNK60Z
• Other names: 497-5682

1 Power Transformer Design Calculations
1.2
6/26
STD1LNK60Z MOSFET Turn Ratio
The maximum MOSFET drain voltage must be below its breakdown voltage. The maximum
drain voltage is the sum of:
The maximum input bus voltage is 375V and the STD1LNK60Z MOSFET breakdown voltage is
600V. Assuming that the voltage drop of output diode is 0.7V, the voltage spike is 95V, and the
margin is at least 50V, the reflected voltage is given as:
The Turn Ratio is given as
where,
V
V
V
V
V
V
N = Turn Ratio
N
N
fl
(BR)DSS
margin
DC(max)
spk
f
p
s
= Secondary reflected voltage
= Voltage drop
= Secondary Winding Turns
= Primary Winding Turns
input bus voltage,
secondary reflected voltage, and
voltage spike (caused by the primary parasitic inductance at maximum input voltage).
V
= Voltage spike
fl
= Voltage margin
=
= Maximum input bus voltage
= MOSFET breakdown voltage
V
BR DSS
–
N
V
m
=
arg
N
------ -
N
in
p
s
–
=
V
--------------------------- -
V
DC max
OUT
V
fl
+
V
–
F
V
=
s pk
----------------- -
5
+
=
80
0.7
600 50
=
–
AN2228 - APPLICATION NOTE
14
–
375
–
95
=
80V