HI5714EVAL Intersil, HI5714EVAL Datasheet - Page 13

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HI5714EVAL

Manufacturer Part Number
HI5714EVAL
Description
EVALUATION PLATFORM HI5714
Manufacturer
Intersil
Datasheets

Specifications of HI5714EVAL

Number Of Adc's
1
Number Of Bits
8
Sampling Rate (per Second)
75M
Data Interface
Parallel
Inputs Per Adc
1 Single Ended
Input Range
2.7 Vpp
Power (typ) @ Conditions
325mW @ 75MSPS
Voltage Supply Source
Analog and Digital
Operating Temperature
0°C ~ 70°C
Utilized Ic / Part
HI5714
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Die Characteristics
DIE DIMENSIONS:
METALLIZATION:
SUBSTRATE POTENTIAL (POWERED UP):
Metallization Mask Layout
134 mils x 134 mils x 19 mils ±1 mil
Type: AlSiCu
Thickness: M1 - 8k
GND (0.0V)
AGND
V
V
CCA
V
V
RB
RT
IN
Å
, M2 - 17k
13
O/UF
DO
Å
D7
D1
D6
HI5714
D2
HI5714
PASSIVATION:
WORST CASE CURRENT DENSITY:
TRANSISTOR COUNT:
DIE ATTACH:
D5
D3
Type: Sandwich Passivation* Undoped Silicon Glass
Thickness: USG - 8k
Total 12.2k
1.6 x 10
3714
Silver Filled Epoxy
D4
4
(USG) + Nitride
A/cm
Å
+ 2k
2
OE
Å
Å
, Nitride - 4.2k
V
OGND
V
V
DGND
CLK
CC02
CC01
CCD
Å

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