HI5731-EVS Intersil, HI5731-EVS Datasheet - Page 15

• Manufacturer Part Number: HI5731-EVS
• Description: EVALUATION PLATFORM SOIC HI5731
• Manufacturer: Intersil

Specifications of HI5731-EVS

• Number Of Dac's: 1
• Number Of Bits: 12
• Outputs And Type: 1, Differential
• Sampling Rate (per Second): 100M
• Data Interface: Parallel
• Settling Time: 20ns
• Dac Type: Current
• Voltage Supply Source: Analog and Digital, Dual ±
• Operating Temperature: -40°C ~ 85°C
• Utilized Ic / Part: HI5731
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Die Characteristics
DIE DIMENSIONS
METALLIZATION
Metallization Mask Layout
161.5 mils x 160.7 mils x 19 mils
Type: AlSiCu
Thickness: M1 - 8k
D7
D6
D5
D4
D3
D2
D1
Å
, M2 - 17k
15
D0
D8
Å
D9
D10
D11
HI5731
HI5731
CLK
PASSIVATION
SUBSTRATE POTENTIAL (POWERED UP)
DGND
DV
Type: Sandwich Passivation
Thickness: USG - 8k
V
CC
EED
DGND
Undoped Silicon Glass (USG) + Nitride
Total 12.2k
DV
EE
Å
, Nitride - 4.2k
Å
+ 2k
Å
CTRL OUT
CTRL IN
R
AV
I
I
ARTN
OUT
OUT
SET
EE
Å