HI5731-EVS Intersil, HI5731-EVS Datasheet - Page 15
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HI5731-EVS
Manufacturer Part Number
HI5731-EVS
Description
EVALUATION PLATFORM SOIC HI5731
Manufacturer
Intersil
Specifications of HI5731-EVS
Number Of Dac's
1
Number Of Bits
12
Outputs And Type
1, Differential
Sampling Rate (per Second)
100M
Data Interface
Parallel
Settling Time
20ns
Dac Type
Current
Voltage Supply Source
Analog and Digital, Dual ±
Operating Temperature
-40°C ~ 85°C
Utilized Ic / Part
HI5731
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Die Characteristics
DIE DIMENSIONS
METALLIZATION
Metallization Mask Layout
161.5 mils x 160.7 mils x 19 mils
Type: AlSiCu
Thickness: M1 - 8k
D7
D6
D5
D4
D3
D2
D1
Å
, M2 - 17k
15
D0
D8
Å
D9
D10
D11
HI5731
HI5731
CLK
PASSIVATION
SUBSTRATE POTENTIAL (POWERED UP)
DGND
DV
Type: Sandwich Passivation
Thickness: USG - 8k
V
CC
EED
DGND
Undoped Silicon Glass (USG) + Nitride
Total 12.2k
DV
EE
Å
, Nitride - 4.2k
Å
+ 2k
Å
CTRL OUT
CTRL IN
R
AV
I
I
ARTN
OUT
OUT
SET
EE
Å