Z8F083A0128ZCOG Zilog, Z8F083A0128ZCOG Datasheet

KIT DEVELOPMENT F083A

Z8F083A0128ZCOG

Manufacturer Part Number
Z8F083A0128ZCOG
Description
KIT DEVELOPMENT F083A
Manufacturer
Zilog
Series
Z8 Encore! XP®r
Type
MCUr
Datasheets

Specifications of Z8F083A0128ZCOG

Contents
Hardware, Software and Documentation
For Use With/related Products
Z8F083A
For Use With
269-4661 - KIT ACC ETHERNET SMART CABLE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
269-4672

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Manufacturer
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Part Number:
Z8F083A0128ZCOG
Manufacturer:
Zilog
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High Performance 8-bit
Microcontrollers
Z8 Encore!
®
F083x Series
Programming Specification
PRS001003-1207
®
Copyright ©2007 by Zilog
, Inc. All rights reserved.
www.zilog.com

Related parts for Z8F083A0128ZCOG

Z8F083A0128ZCOG Summary of contents

Page 1

... High Performance 8-bit Microcontrollers Z8 Encore! ® Programming Specification PRS001003-1207 ® Copyright ©2007 by Zilog , Inc. All rights reserved. www.zilog.com F083x Series ...

Page 2

... Drive the TESTMODE pad Low. 3. Wait for the Power-On Reset (POR) to exit. POR is clocked by an internal RC oscillator and lasts approximately 5 ms after the brown-out threshold is passed. PRS001003-1207 ® MCU family of products are the first in line of Zilog microcontroller ® ® CPU instructions. The rich peripheral ® ...

Page 3

Flash Test Mode Entry Prevention If, IWP[3:0] (bits 7:4 at Flash Information Area address FE05H) is set to 0110b and FWP (bit 2 of Program Memory address 0000H) is set to 0, then Flash test mode cannot be entered. Program ...

Page 4

The Flash memory control signals are listed and described in Table 1. Flash Memory Control Signals Signal ADDR[13:0] DIN[7:0] DOUT[7: IFREN NVSTR PROG SERA MASE VDD GND FME, HILO MUXENB, TMR TM[3:0] Flash Memory Operations When bypassing ...

Page 5

Table 2. User Mode Truth Table (Continued) Sector H H Erase Mass H H Erase *X stands for don’t care, and it is necessary to bias at either "H" or "L", L stands for logic Low, H stands for logic ...

Page 6

... ADDR[8] If Flash test mode is entered through the OCD test mode register, the ERASE, PROG, MAS1, and NVSTR signals are subject to the state of ERASE_EN and PROG_EN Zilog option bits at Flash Information Area address FE05H. The IFREN signal is subject to the IWP[0] Zilog option bit at Flash Information Area address FE05H. ...

Page 7

Figure 1 displays the multiplexed register structure that allows access to all Flash memory signals through GPIO Port A Data Input/Output Data [7] Data [6] Data [5] Data [4] Data [3] Data [2] Data [1] Data [0] SYSCLK Select Register ...

Page 8

SysClk PortA[7: Select[2:0] 3 Figure 2. addr and Control Signal Timing 1. Set Select = 0 and apply high 8-bit SysClk. 2. Set Select = 1 and apply low 8-bit SysClk. 3. Set Select ...

Page 9

Bypass Mode Register Read Timing Figure 4 displays the single read operation timing. IFREN Tcyc ADDR0 ADDR Tasr AE Taerh CE Tae OE High-Z DOUT Figure 4. Single Read Operation Timing PRS001003-1207 Tasr Taefh Tceplr Tdf High-Z Valid Data for ...

Page 10

Continuous Read Operation Timing Figure 5 displays the continuous read operation timing. operation parameters. Tasr IFREN IFREN ADDR Taerh Tae DOUT High-Z Figure 5. Continuous Read Operation Timing Table 5. Read Operation Parameters Parameter Address, CE, OE ...

Page 11

During read operation, PROG, SERA, MASE, and NVSTR are always logic "L". Notes: 2. IFREN pin determines whether the macros, CE and AE must be asserted; otherwise macro will ignore any change from control pins and address ...

Page 12

Flash Program Operation Timing Figure 6 displays the program operation timing. parameters. IFREN ADDR DIN AE Tpgs CE PROG NVSTR PRS001003-1207 Table 6 Tis Tih Tas Tah Tds Tdh Taeph Tnvs Tpgh Figure 6. Program Operation Timing ® Z8 Encore! ...

Page 13

Continuous Program Operation Timing Figure 7 displays the continuous program operation timing. Tis Tih IFREN Tas Tah ADDR Tds Tdh DIN AE Tpgs Taeph CE PROG Tnvs NVSTR Figure 7. Continuous Program Operation Timing PRS001003-1207 Tis Tih Tis Tas Tah ...

Page 14

Figure 8 displays the Read Operation After Program Timing. Tis Tih IFREN Tas Tah ADDR Tds Tdh DIN AE Tpgs CE PROG Tnvs Tpgh NVSTR OE High-Z DOUT High-Z Figure 8. Read Operation After Program Timing PRS001003-1207 Tasr Tahr Taefh ...

Page 15

Table 6. Program Operation Parameters Parameter Read cycle time Program setup time AE enable program hold time NVSTR setup time Program hold time Program recovery time AE hold time IFREN setup time in program IFREN hold time in program Address ...

Page 16

For information block programming, ADDR [13:7] are don’t care. ADDR [6:0] are used to select one column in each I/O within the information block you do not follow the timing spec such as Tnvs and Tprec, it ...

Page 17

Tis IFREN Tas ADDR DIN AE Tses CE SERA NVSTR Figure 9. Sector Erase Operation Timing PRS001003-1207 Tih Tis Tah Tas Taeplse Tses Tnv Tse Tsrec s h ® Z8 Encore! F083x Series Tih Tah Tnv Tse Tsrec s h ...

Page 18

Read Operation After Sector Erase Timing Figure 10 displays the read operation after Sector Erase timing. operation parameters. Tis Tih IFREN IFREN Tas Tah ADDR DIN AE Tses CE SERA Tnvs Tseh NVSTR OE High-Z DOUT High-Z Figure 10. Read ...

Page 19

Table 7. Sector Erase Operation Parameters Parameter Read cycle time Sector Erase setup time NVSTR setup time Sector Erase hold time Sector Erase recovery time AE hold time IFREN setup time in SERA IFREN hold time in SERA Address setup ...

Page 20

If you do not follow the timing specification such as Tnvs and Tsrec it may cause fatal damage. 6. All input waveforms are with rising time (tr) and falling time (tf ns. The capacitor loading for all ...

Page 21

IFREN IFREN ADDR DIN AE Tmes CE MASE NVSTR Figure 11. Mass Erase Operation Timing PRS001003-1207 Tis Tih Tnvs Tmeh Tmrec ® Z8 Encore! F083x Series Page ...

Page 22

Tis Tih IFREN IFREN ADDR DIN AE Tme s CE MASE Tnvs Tmeh NVSTR OE High-Z DOUT High-Z Figure 12. Read Operation After Mass Erase Operation Timing PRS001003-1207 Tasr Tahr Tae Taefh h Tmr Trm Taerh Tceplr Tcyc Tceplr Tmrec ...

Page 23

Table 8. Mass Erase Operation Parameters Parameter Read cycle time Mass erase setup time NVSTR setup time Mass Erase hold time Mass Erase recovery time AE hold time IFREN setup time in ME IFREN hold time in ME Address setup ...

Page 24

Access time (Tae) is measured with 0.1 pF loading capacitance. 8. Tdf means data hold time from the end of Tcyc. Output data will not be valid after Tdf. PRS001003-1207 ® Z8 Encore! F083x Series Page ...

Page 25

Z8 Encore! F083x Flash Programming Flowchart Figure 13 displays an example flowchart for read and write operations. RESET & START DBG LOW Autobaud Write OCD Send break 0x80 * FFREQH Write OCD 0x08, Mass Yes 0x0F, Erase 0xFA, Flash? ...

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