TCFGB1C226M8R Rohm Semiconductor, TCFGB1C226M8R Datasheet - Page 3

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TCFGB1C226M8R

Manufacturer Part Number
TCFGB1C226M8R
Description
CAP TANT 22UF 16V 20% SMD
Manufacturer
Rohm Semiconductor
Series
TCFGr
Type
Moldedr
Datasheet

Specifications of TCFGB1C226M8R

Capacitance
22µF
Voltage - Rated
16V
Tolerance
±20%
Esr (equivalent Series Resistance)
1.900 Ohm
Operating Temperature
-55°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
1210 (3528 Metric)
Size / Dimension
0.138" L x 0.110" W (3.50mm x 2.80mm)
Height
0.075" (1.90mm)
Manufacturer Size Code
B
Features
Fail Safe with Built-in Fuse
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Spacing
-
Other names
511-1671-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TCFGB1C226M8R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Part Number:
TCFGB1C226M8R
Quantity:
2 000
Characteristics
TCFG Series B Case
c
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2010 ROHM Co., Ltd. All rights reserved.
Operating Temperature
Maximum operating temperature
with no voltage derating
Rated Voltage (V.DC)
Category Voltage (V.DC)
Surge Voltage
DC leakage current
Capacitance tolerance
Tangent of loss angle
(Df, tanδ)
Impedance
Resistance to
soldering heat
Fail-Safe open unit actuation Within 320 °C − 20s
Temperature
cycle
Moisture
resistance
Item
Appearance
L.C
ΔC / C
tanδ
Appearance
L.C
ΔC / C
tanδ
Appearance
L.C
ΔC / C
tanδ
2.5
1.6
3.2
−55 °C to +125 °C
+85 °C
0.5μA or 0.01CV whichever is greater
(Shown in "Standard list")
Shall be satisfied allowance range.
±
Shall be satisfied the voltage on "Standard list"
Shall be satisfied the voltage on "Standard list"
There should be no significant abnormality.
The indications should be clear.
There should be no significant abnormality.
TCFGB0G227M8R
TCFGB0J227M8R
TCFGB1A107M8R
TCFGB1E475M8R
Others
TCFGB0E227M8R
TCFGB0G227M8R
TCFGB0J227M8R
TCFGB1A107M8R
Others
3.3 to 33μF
47 to 150μF
TCFGB0G227M8R
TCFGB0J227M8R
TCFGB1A107M8R
TCFGB1C336M8R
There should be no significant abnormality.
The indications should be clear.
TCFGB0G227M8R
TCFGB0J227M8R
TCFGB1A107M8R
TCFGB1E475M8R
Others
TCFGB0G227M8R
TCFGB0J227M8R
TCFGB1A107M8R
Others
3.3 to 33μF
47 to 150μF
TCFGB0G227M8R
TCFGB0J227M8R
TCFGB1A107M8R
TCFGB1C336M8R
TCFGB0G227M8R
TCFGB0J227M8R
TCFGB1A107M8R
TCFGB1E475M8R
Others
TCFGB0G227M8R
TCFGB0J227M8R
TCFGB1A107M8R
TCFGB1E475M8R
Others
3.3 to 33μF
47 to 150μF
TCFGB0E227M8R
TCFGB0G227M8R
TCFGB0J227M8R
TCFGB1A107M8R
TCFGB1C336M8R
20%
2.5
5.0
4
6.3
4
8
6.3
10
13
Performance
: Less than 150% of initial limit
: Less than 200% of initial limit
: Less than 200% of initial limit
: Less than 150% of initial limit
: Less than initial limit
: Less than 150% of initial limit
: Less than 200% of initial limit
: Less than 200% of initial limit
: Less than 150% of initial limit
: Less than initial limit
16
10
20
: Less than 150% of initial limit
: Less than 150% of initial limit
: Less than 150% of initial limit
: Less than 150% of initial limit
: Less than initial limit
: Within
: Within
: Within
: Within
: Within
: Within
: Within
: Within
: Within
: Within
: Within
: Within
: Within
: Within
: Less than initial limit
: Less than 150% of initial limit
: Less than 200% of initial limit
: Less than 150% of initial limit
: Less than 150% of initial limit
: Less than 150% of initial limit
: Less than 150% of initial limit
: Less than initial limit
: Less than 150% of initial limit
: Less than 150% of initial limit
: Less than 200% of initial limit
: Less than 200% of initial limit
: Less than 150% of initial limit
: Less than initial limit
: Less than 150% of initial limit
: Less than 150% of initial limit
: Less than 200% of initial limit
: Less than 200% of initial limit
: Less than 150% of initial limit
20
13
26
±
±
±
±
±
±
±
±
±
±
±
±
±
±
15% of initial value
15% of initial value
20% of initial value
20% of initial value
10% of initial value
15% of initial value
20% of initial value
20% of initial value
10% of initial value
15% of initial value
15% of initial value
15% of initial value
10% of initial value
25
16
32
5% of initial value
3/7
Voltage reduction when temperature exceeds +85°C
at 85 °C
at 125 °C
at 85 °C
As per 4.9 JIS C 5101-1
As per 4.5.1 JIS C 5101-3
Voltage : Rated voltage for 1 min
As per 4.7 JIS C 5101-1
As per 4.5.2 JIS C 5101-3
Measuring frequency
Measuring voltage
Measuring circuit
As per 4.8 JIS C 5101-1
As per 4.5.3 JIS C 5101-3
Measuring frequency
Measuring voltage
Measuring circuit
As per 4.10 JIS C 5101-1
As per 4.5.4 JIS C 5101-3
Measuring frequency
Measuring voltage
Measuring circuit
As per 4.14 JIS C 5101-1
As per 4.6 JIS C 5101-3
Dip in the solder bath
Solder temp
Duration
Repetition
After the specimens, leave it at room temperature
for over 24h and then measure the sample.
Dip in the solder bath
As per 4.16 JIS C 5101-1
As per 4.10 JIS C 5101-3
Repetition : 5 cycles (1 cycle : steps 1 to 4)
without discontinuation.
After the specimens, leave it at room temperature
for over 24h and then measure the sample.
As per 4.22 JIS C 5101-1
As per 4.12 JIS C 5101-3
After leaving the sample under such atmospheric
condition that the temperature and humidity are
60
500
and then measure the sample.
±
Solder temp : 320
(based on JIS C5101-1 and JIS C5101-3)
2 °C and 90 to 95%RH, respectively, for
±
Step
12h level it at room temperature for over 24h
1
2
3
4
Room temp.
Room temp.
−55 3 °C
125 2°C
Temp.
: 260
: 5
: 1
+ −
+ −
Test conditions
±
0.5s
: 100
: 0.5Vrms or less
: DC Equivalent series circuit
±5°C
: 120
: 0.5Vrms, +1.5V.DC
: DC Equivalent series circuit
: 120
: 0.5Vrms, +1.5V.DC
: DC Equivalent series circuit
±
5 °C
±
3min. or less
3min. or less
±
±
10kHz
12Hz
12Hz
30 3min
30 3min
Time
+ −
+ −
2010.01 - Rev.G
Data Sheet

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