2SC2497 Panasonic Semiconductor, 2SC2497 Datasheet
2SC2497
Related parts for 2SC2497
2SC2497 Summary of contents
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... Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A I Features • High collector to emitter voltage V • TO-126B package which requires no insulation plate for installa- tion to the heat sink I Absolute Maximum Ratings T Parameter Symbol ...
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... R V CER BE 100 I =10mA C T =25˚ 0.1 0 100 ( kΩ ) Base to emitter resistance R BE 2SC2497, 2SC2497A CE(sat = 0.3 T =100˚C C 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0 Collector current I C I ...
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... Area of safe operation (ASO) 10 Single pulse T =25˚ t=10ms t=1s 0.3 0.1 0.03 0.01 0.003 0.001 0.1 0 100 ( V ) Collector to emitter voltage V CE 190 Power Transistors ...
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... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...