AN804 Vishay Siliconix, AN804 Datasheet

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AN804

Manufacturer Part Number
AN804
Description
P-Channel MOSFETs/ the Best Choice for High-Side Switching
Manufacturer
Vishay Siliconix
Datasheet

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Historically, p-channel FETs were not considered as useful as
their n-channel counterparts. The higher resistivity of p-type
silicon, resulting from its lower carrier mobility, put it at a
disadvantage compared to n-type silicon.
Getting n-type performance out of p-type FETs has meant
larger
inter-electrode
complementary pair—a p-channel and an n-channel device
that match in all parameters—is impossible.
Yet, despite its shortcomings, the p-channel MOSFET
performs a vital “high-side” switch task that the n-channel
simply cannot equal.
Used as a high-side switch, a p-channel MOSFET in a
totem-pole arrangement with an n-channel MOSFET will
simulate a high-current, high-power CMOS (complementary
MOS) arrangement. Although the p-channel MOSFET cannot
complement the n-channel in both on-resistance and
capacitance simultaneously, such combinations as the
low-threshold p-channel TP0610 and the n-channel 2N7000
together offer outstanding performance as a complementary
pair.
Document Number: 70611
10-Mar-97
P-Channel MOSFETs, the Best Choice for High-Side Switching
area
V
GG
0
geometries
capacitances.
FIGURE 1. Comparing the Performance Between N-Channel and P-Channel Grounded-Load Switching
with
N-Channel
Consequently,
correspondingly
(1a)
Load
0
a
higher
truly
V
GG
– V
V
DD
th
Switching Ground-Return Loads
The principal application of the p-channel, enhancement-
mode MOSPOWER FET is in switching power (or voltage) to
grounded (ground return) loads.
To drive the FET properly, the gate voltage must be referenced
to its source. For enhancement-mode MOSFETs, this gate
potential is of the same polarity as the MOSFET’s drain
voltage. To turn on, the n-channel MOSFET requires a positive
gate-source voltage, whereas the p-channel MOSFET
requires a negative gate-source potential.
During switching, a MOSFET’s source voltage must remain
fixed, as any variation will modulate the gate and thus
adversely affect performance. Figure
degradation by comparing n-channel and p-channel MOSFET
high-side switching.
P-Channel
(1b)
Load
www.vishay.com FaxBack 408-970-5600
Vishay Siliconix
0
V
V
DD
DD
– I
L
1 shows this
r
DS
AN804
1

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AN804 Summary of contents

Page 1

... During switching, a MOSFET’s source voltage must remain fixed, as any variation will modulate the gate and thus adversely affect performance. Figure degradation by comparing n-channel and p-channel MOSFET high-side switching. P-Channel – (1b) AN804 Vishay Siliconix 1 shows this – Load www.vishay.com FaxBack 408-970-5600 ...

Page 2

... AN804 Vishay Siliconix If an n-channel, enhancement-mode MOSFET were switching a positive-polarity voltage to a grounded load, the output would be limited to V – The equations describing performance of the n-channel ground-switching MOSFET with a ground-reference gate drive are based on the relationship between then – ...

Page 3

... OUT current in this critical output driver. This increases both the driver’s efficiency and its reliability. –15 V Part Number Si9939DY Si9942DY and – Si9928DY AN804 Vishay Siliconix – (V) r Max ( ) I (A) (BR)DSS DS D 30/–30 0.05/0.1 3.5/–3.5 20/–20 0.125/0.2 3/– ...

Page 4

... AN804 Vishay Siliconix P-Channel Devices Part Number V Min (V) r (BR)DSS DS VP0300L –30 TP0610L –60 VP2020L –200 TP0101T* –12 TP0610T* –60 *Surface Mount Package www.vishay.com FaxBack 408-970-5600 4 Max ( ) Package Part Number V 2.5 TO-226AA VN0300L 10 TO-226AA 2N7000 20 TO-226AA VN2010L 0.65 TO-236 TN0200T* 10 TO-236 2N7002* N-Channel Devices ...

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