IRF3315 International Rectifier, IRF3315 Datasheet
IRF3315
Specifications of IRF3315
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IRF3315 Summary of contents
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... HEXFET TO-220AB Max. @ 10V GS @ 10V GS 108 136 0.91 ± 20 350 13.6 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– PD -91623A IRF3315 ® Power MOSFET V = 150V DSS R = 0.07 DS(on 27A D Units W/° 2.5 V/ns ° ...
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... IRF3315 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... Fig 2. Typical Output Characteristics 3 2.5 2.0 ° 175 C J 1.5 1.0 0.5 = 50V 0.0 8.0 9.0 10.0 -60 -40 -20 0 Fig 4. Normalized On-Resistance IRF3315 VGS 15V 10V 8.0V 7.0V 6.0V INPUT NEW DATA 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 ...
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... IRF3315 3000 1MHz iss rss gd 2500 oss iss 2000 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 175 C ° J INPUT NEW DATA 1 ° 0.1 0.3 0.6 0.9 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com APPROVED R G 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF3315 D.U. µ d(off ...
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... IRF3315 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 APPROVED 1000 800 600 400 + 200 Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b. Gate Charge Test Circuit ...
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... Low Leakage Inductance Current Transformer - - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% Fig 14. For N-Channel HEXFETS IRF3315 + =10V ...
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... IRF3315 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82 LIN Part Marking Information TO-220AB ITH WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...