PHT6N06 PHILIPS [NXP Semiconductors], PHT6N06 Datasheet
PHT6N06
Available stocks
Related parts for PHT6N06
PHT6N06 Summary of contents
Page 1
... T = 100 ˚ 100 ˚C amb ˚ ˚C amb ˚ ˚C amb - CONDITIONS Human body model (100 pF, 1 Product specification PHT6N06T MAX ˚C 5 ˚C 2.5 amb 8.3 150 150 SYMBOL MIN. MAX 5 ...
Page 2
... 25˚C j CONDITIONS T = 25˚ 25˚ -dI /dt = 100 - Product specification PHT6N06T TYP. MAX. UNIT K/W MIN. TYP. MAX. UNIT 2.0 3.0 4 ...
Page 3
... Philips Semiconductors TrenchMOS transistor Standard level FET AVALANCHE LIMITING VALUE SYMBOL PARAMETER W Drain-source non-repetitive DSS unclamped inductive turn-off energy September 1997 CONDITIONS ˚ Product specification PHT6N06T MIN. TYP. MAX. UNIT - - 15 mJ Rev 1.000 ...
Page 4
... Fig.5. Typical output characteristics 400 RDS(ON)mOhm BUKX8150-55 300 200 100 100 10 ms 100 ˚C Fig.6. Typical on-state resistance Product specification PHT6N06T BUKX8150-55 Zth / (K/W) 0.5 0.2 0.1 0.05 0. 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter j-sp ...
Page 5
... 350 300 250 200 150 100 50 0 150 200 0.01 Fig.12. Typical capacitances f Product specification PHT6N06T BUK78xx-55 max. typ. min. - 100 150 Fig.10. Gate threshold voltage. = f(T ); conditions mA Sub-Threshold Conduction 2% typ 98% ...
Page 6
... VDS = 44V Fig.15. Normalised avalanche energy rating VGS 0 1 1.2 1.4 Fig.16. Avalanche energy test circuit. j VGS 0 6 Product specification PHT6N06T 100 120 140 Tmb / f(T ); conditions 1.9 A DSS VDS - T.U. RGS shunt ...
Page 7
... Philips Semiconductors TrenchMOS transistor Standard level FET MOUNTING INSTRUCTIONS Fig.18. soldering pattern for surface mounting SOT223. PRINTED CIRCUIT BOARD September 1997 3.8 min 1.5 min 2.3 6.3 1.5 min (3x) 1.5 min 4.6 7 Product specification PHT6N06T Dimensions in mm. Rev 1.000 ...
Page 8
... Philips Semiconductors TrenchMOS transistor Standard level FET Fig.19. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick). September 1997 Product specification PHT6N06T Dimensions in mm. 18 4.5 Rev 1.000 ...
Page 9
... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". September 1997 6.7 6.3 3.1 0.32 0.24 2.9 0.10 0. max 1.05 2.3 1.8 max 0.85 4.6 Fig.20. SOT223 surface mounting package. 9 Product specification PHT6N06T B 0 7.3 3.7 6.7 3 0.80 0 0.60 (4x) Rev 1.000 M A ...
Page 10
... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 10 Product specification PHT6N06T Rev 1.000 ...