C8051F321-GM Silicon Laboratories Inc, C8051F321-GM Datasheet - Page 107

IC 8051 MCU 16K FLASH 28MLP

C8051F321-GM

Manufacturer Part Number
C8051F321-GM
Description
IC 8051 MCU 16K FLASH 28MLP
Manufacturer
Silicon Laboratories Inc
Series
C8051F32xr
Datasheets

Specifications of C8051F321-GM

Program Memory Type
FLASH
Program Memory Size
16KB (16K x 8)
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
21
Ram Size
2.25K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 13x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F3x
Core
8051
Data Bus Width
8 bit
Data Ram Size
2.25 KB
Interface Type
I2C/SMBus/SPI/UART/USB
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
21
Number Of Timers
4
Operating Supply Voltage
2.7 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F320DK
Minimum Operating Temperature
- 40 C
On-chip Adc
13-ch x 10-bit or 17-ch x 10-bit
No. Of I/o's
21
Ram Memory Size
1280Byte
Cpu Speed
25MHz
No. Of Timers
4
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
336-1480 - DAUGHTER CARD TOOLSTCK C8051F321770-1006 - ISP 4PORT FOR SILABS C8051F MCU336-1449 - ADAPTER PROGRAM TOOLSTICK F321336-1260 - DEV KIT FOR C8051F320/F321
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1261

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11.1.3. Flash Write Procedure
Flash bytes are programmed by software with the following sequence:
Steps 3-8 must be repeated for each byte to be written. After Flash writes are complete, PSWE should be
cleared so that MOVX instructions do not target program memory.
Table 11.1. Flash Electrical Characteristics
11.2. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction and read using the MOVC instruction. Note: MOVX read instructions always target XRAM.
*Note: 512 bytes at location 0x3E00 to 0x3FFF are reserved.
Erase Cycle Time
Write Cycle Time
Parameter
Endurance
Flash Size
Step 1. Disable interrupts (recommended).
Step 2. Erase the 512-byte Flash page containing the target location, as described in Section
Step 3. Write the first key code to FLKEY: 0xA5.
Step 4. Write the second key code to FLKEY: 0xF1.
Step 5. Set the PSWE bit (register PSCTL).
Step 6. Clear the PSEE bit (register PSCTL).
Step 7. Using the MOVX instruction, write a single data byte to the desired location within the 512-
Step 8. Clear the PSWE bit (register PSCTL).
11.1.2.
byte sector.
25 MHz System Clock
25 MHz System Clock
C8051F320/1
Conditions
Rev. 1.4
16384*
Min
20k
10
40
100k
Typ
15
55
C8051F320/1
Max
20
70
Erase/Write
Units
bytes
ms
µs
107

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