IC M16C MCU FLASH 512K 100LQFP

M30626FJPGP#U3C

Manufacturer Part NumberM30626FJPGP#U3C
DescriptionIC M16C MCU FLASH 512K 100LQFP
ManufacturerRenesas Electronics America
SeriesM16C™ M16C/60
M30626FJPGP#U3C datasheets
 

Specifications of M30626FJPGP#U3C

Core ProcessorM16C/60Core Size16-Bit
Speed24MHzConnectivityI²C, IEBus, UART/USART
PeripheralsDMA, WDTNumber Of I /o85
Program Memory Size512KB (512K x 8)Program Memory TypeFLASH
Ram Size31K x 8Voltage - Supply (vcc/vdd)2.7 V ~ 5.5 V
Data ConvertersA/D 26x10b; D/A 2x8bOscillator TypeInternal
Operating Temperature-40°C ~ 85°CPackage / Case100-LQFP
For Use With867-1000 - KIT QUICK START RENESAS 62PR0K33062PS001BE - R0K33062P STARTER KITR0K33062PS000BE - KIT EVAL STARTER FOR M16C/62PM3062PT3-CPE-3 - EMULATOR COMPACT M16C/62P/30PLead Free Status / RoHS StatusLead free / RoHS Compliant
Eeprom Size-  
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M16C/62P Group (M16C/62P, M16C/62PT)
Table 5.12
Electrical Characteristics (2)
Symbol
Parameter
I
Power Supply Current
CC
(V
=V
=4.0V to 5.5V)
CC1
CC2
I
Low Voltage Detection Dissipation Current
det4
I
Reset Area Detection Dissipation Current
det3
NOTES:
1. Referenced to V
=V
=4.2 to 5.5V, V
CC1
CC2
specified.
2. With one timer operated using fC32.
3. This indicates the memory in which the program to be executed exists.
4. I
is dissipation current when the following bit is set to “1” (detection circuit enabled).
det
I
: VC27 bit in the VCR2 register
det4
I
: VC26 bit in the VCR2 register
det3
Rev.2.41
Jan 10, 2006
Page 49 of 96
REJ03B0001-0241
(1)
Measuring Condition
In single-chip
Mask ROM
f(BCLK)=24MHz
No division, PLL operation
mode, the output
No division,
pins are open and
On-chip oscillation
other pins are V
SS
Flash
f(BCLK)=24MHz,
No division, PLL operation
Memory
No division,
On-chip oscillation
Flash Memory
f(BCLK)=10MHz,
VCC1=5.0V
Program
Flash Memory
f(BCLK)=10MHz,
VCC1=5.0V
Erase
Mask ROM
f(XCIN)=32kHz
Low power dissipation
mode, ROM
Flash Memory
f(BCLK)=32kHz
Low power dissipation
mode, RAM
f(BCLK)=32kHz
Low power dissipation
mode, Flash Memory
On-chip oscillation,
Wait mode
Mask ROM
f(BCLK)=32kHz
Wait mode
Flash Memory
Oscillation capability High
f(BCLK)=32kHz
Wait mode
Oscillation capability Low
Stop mode
Topr =25°C
(4)
(4)
= − 20 to 85 ° C / − 40 to 85 ° C, f(BCLK)=24MHz unless otherwise
= 0V at T
SS
opr
5. Electrical Characteristics
Standard
Unit
Min.
Typ.
Max.
14
20
mA
1
mA
18
27
mA
1.8
mA
15
mA
25
mA
µ A
25
(3)
µ A
25
(3)
µ A
420
(3)
µ A
50
µ A
(2)
7.5
,
µ A
(2)
2.0
,
µ A
0.8
3.0
µ A
0.7
4
µ A
1.2
8