C8051F349-GM Silicon Laboratories Inc, C8051F349-GM Datasheet - Page 24

• Manufacturer Part Number: C8051F349-GM
• Description: IC 8051 MCU 32K FLASH MEM 32-QFN
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F34xr

Specifications of C8051F349-GM

• Program Memory Type: FLASH
• Program Memory Size: 32KB (32K x 8)
• Package / Case: 32-QFN
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 25
• Ram Size: 2.25K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: C8051F3x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 2304 B
• Interface Type: I2C, SPI, UART
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 25
• Number Of Timers: 4
• Operating Supply Voltage: 2.7 V to 5.25 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: KSK-SL-F34X, KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F340DK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 336-1748 - ADAPTER TOOLSTICK FOR C8051F34X
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1349-5

C8051F340/1/2/3/4/5/6/7/8/9/A/B/C/D
2.
24
Ambient temperature under bias
Storage Temperature
Voltage on any Port I/O Pin or RST with
respect to GND
Voltage on V
Maximum Total current through V
GND
Maximum output current sunk by RST or any
Port pin
*Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
Absolute Maximum Ratings
device. This is a stress rating only and functional operation of the devices at those or any other conditions
above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
DD
with respect to GND
Parameter
Table 2.1. Absolute Maximum Ratings*
DD
and
Rev. 1.3
Conditions
–0.3
–0.3
Min
–55
–65
Typ
Max
125
150
500
100
5.8
4.2
Units
mA
mA
°C
°C
V
V