AT90USB82-16MUR Atmel, AT90USB82-16MUR Datasheet - Page 252

• Manufacturer Part Number: AT90USB82-16MUR
• Description: MCU AVR USB 8K FLASH 32-QFN
• Manufacturer: Atmel
• Series: AVR® 90USBr

Specifications of AT90USB82-16MUR

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 22
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-QFN
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SPI, USART, debugWIRE
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 22
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• For Use With: ATSTK600 - DEV KIT FOR AVR/AVR32ATSTK526 - KIT STARTER FOR AT90USB82/162ATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATSTK525 - KIT STARTER FOR AT90USBAT90USBKEY2 - KIT DEMO FOR AT90USB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -
• Lead Free Status / Rohs Status: Details

25.6.5
25.6.6
252
AT90USB82/162
Programming the EEPROM
Reading the Flash
The EEPROM is organized in pages, see
EEPROM, the program data is latched into a page buffer. This allows one page of data to be
programmed simultaneously. The programming algorithm for the EEPROM data memory is as
follows (refer to
Data loading):
K: Repeat 3 through 5 until the entire buffer is filled.
L: Program EEPROM page
Figure 25-4. Programming the EEPROM Waveforms
The algorithm for reading the Flash memory is as follows (refer to
page 249
1. A: Load Command “0001 0001”.
2. G: Load Address High Byte (0x00 - 0xFF).
3. B: Load Address Low Byte (0x00 - 0xFF).
4. C: Load Data (0x00 - 0xFF).
5. E: Latch data (give PAGEL a positive pulse).
1. Set BS2, BS1 to “00”.
2. Give WR a negative pulse. This starts programming of the EEPROM page. RDY/BSY
3. Wait until to RDY/BSY goes high before programming the next page (See
1. A: Load Command “0000 0010”.
2. H: Load Address Extended Byte (0x00- 0xFF).
3. G: Load Address High Byte (0x00 - 0xFF).
4. B: Load Address Low Byte (0x00 - 0xFF).
5. Set OE to “0”, and BS1 to “0”. The Flash word low byte can now be read at DATA.
6. Set BS to “1”. The Flash word high byte can now be read at DATA.
7. Set OE to “1”.
RESET +12V
goes low.
for signal waveforms).
RDY/BSY
PAGEL
XTAL1
DATA
XA1
XA0
BS1
BS2
WR
OE
for details on Command and Address loading):
“Programming the Flash” on page 249
0x11
A
ADDR. HIGH
G
ADDR. LOW
B
DATA
C
Table 25-12 on page
XX
E
ADDR. LOW
B
for details on Command, Address and
DATA
C
K
XX
E
248. When programming the
“Programming the Flash” on
L
Figure 25-4
7707F–AVR–11/10