UPD70F3745GJ-GAE-AX Renesas Electronics America, UPD70F3745GJ-GAE-AX Datasheet - Page 831

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UPD70F3745GJ-GAE-AX

Manufacturer Part Number
UPD70F3745GJ-GAE-AX
Description
MCU 32BIT V850ES/JX3 144-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Jx3r
Datasheet

Specifications of UPD70F3745GJ-GAE-AX

Core Processor
RISC
Core Size
32-Bit
Speed
32MHz
Connectivity
CSI, EBI/EMI, I²C, UART/USART
Peripherals
DMA, LVD, PWM, WDT
Number Of I /o
128
Program Memory Size
768KB (768K x 8)
Program Memory Type
FLASH
Ram Size
60K x 8
Voltage - Supply (vcc/vdd)
2.85 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD70F3745GJ-GAE-AX
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
UPD70F3745GJ-GAE-AX/JS
Manufacturer:
EPSON
Quantity:
188
Part Number:
UPD70F3745GJ-GAE-AX/JS
Manufacturer:
RENESAS
Quantity:
1 000
V850ES/JJ3
RAM Retention Detection
(T
Note
R01UH0016EJ0400 Rev.4.00
Sep 30, 2010
Detection voltage
Supply voltage rise time
Response time
Minimum pulse width
A
= −40 to +85°C, V
Time required to detect the detection voltage and set the RAMS.RAMF bit.
Detection voltage (MAX.)
Operating voltage (MIN.)
Detection voltage (MIN.)
Detection voltage (TYP.)
Parameter
Note
RAMS.RAMF bit
Supply voltage
DD
= EV
(V
DD
DD
= AV
)
V
t
t
t
RAMHTH
RAMHD
RAMHW
Symbol
REF0
RAMH
= AV
REF1
V
After V
t
DD
RAMHD
t
RAMHTH
, V
= 0 to 2.85 V
Cleared by instruction
DD
SS
reaches 2.1 V
= EV
Conditions
SS
CHAPTER
= AV
SS
= 0 V, C
29
L
0.002
= 50 pF)
MIN.
1.9
0.2
t
RAMHW
ELECTRICAL
TYP.
2.0
0.2
t
RAMHD
MAX.
2.1
3.0
SPECIFICATIONS
Time
Page 815 of 892
Unit
ms
ms
ms
V

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