AT90S4433-8PC Atmel, AT90S4433-8PC Datasheet - Page 96

IC MCU 4K FLSH 8MHZ A/D 28DIP

AT90S4433-8PC

Manufacturer Part Number
AT90S4433-8PC
Description
IC MCU 4K FLSH 8MHZ A/D 28DIP
Manufacturer
Atmel
Series
AVR® 90Sr
Datasheet

Specifications of AT90S4433-8PC

Core Processor
AVR
Core Size
8-Bit
Speed
8MHz
Connectivity
SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
20
Program Memory Size
4KB (2K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
4 V ~ 6 V
Data Converters
A/D 6x10b
Oscillator Type
External
Operating Temperature
0°C ~ 70°C
Package / Case
28-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT90S4433-8PC
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Table 35. Serial Programming Instruction Set
Note:
96
Instruction
Programming Enable
Chip Erase
Read Program Memory
Write Program Memory
Read EEPROM
Memory
Write EEPROM
Memory
Write Lock Bits
Read Lock Bits
Read Sigature Bytes
Write Fuse Bits
Read Fuse Bits
1. The signature bytes are not readable in lock mode 3, i.e., both Lock bits programmed.
AT90S/LS4433
a = address high bits
b = address low bits
H = 0 – Low Byte, 1 – High Byte
o = data out
i = data in
x = don’t care
1 = Lock bit 1
2 = Lock bit 2
3 = CKSEL0 Fuse
4 = CKSEL1 Fuse
5 = CKSEL2 Fuse
6 = BODEN Fuse
7 = BODLEVEL Fuse
8 = SPIEN Fuse
1010 1100
1010 1100
0010 H000
0100 H000
1010 0000
1100 0000
1010 1100
0101 1000
0011 0000
1010 1100
0101 0000
Byte 1
0101 0011
100x xxxx
xxxx xaaa
xxxx xaaa
xxxx xxxx
xxxx xxxx
1111 1211
xxxx xxxx
xxxx xxxx
1017 6543
xxxx xxxx
Byte 2
Instruction Format
xxxx xxxx
xxxx xxxx
bbbb bbbb
bbbb bbbb
bbbb bbbb
bbbb bbbb
xxxx xxxx
xxxx xxxx
xxxx xxbb
xxxx xxxx
xxxx xxxx
Byte 3
xxxx xxxx
xxxx xxxx
oooo oooo
iiii iiii
oooo oooo
iiii iiii
xxxx xxxx
xxxx x21x
oooo oooo
xxxx xxxx
xx87 6543
Byte4
Operation
Enable Serial Programming while
RESET is low.
Chip Erase Flash and EEPROM
memory arrays.
Read H (high or low) data o from
program memory at word address
a:b.
Write H (high or low) data i to
program memory at word address
a:b.
Read data o from EEPROM memory
at address a:b.
Write data i to EEPROM memory at
address a:b.
Write Lock bits. Set bits 1,2= “0” to
program Lock bits.
Read Lock bits. “0” = programmed,
“1” = unprogrammed.
Read signature byte o at address b.
Set bits 7 - 3 = “0” to program, “1” to
unprogram.
Read Fuse bits. “0” = programmed,
“1” = unprogrammed.
1042H–AVR–04/03
(1)

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