MCP6024-E/SL Microchip Technology, MCP6024-E/SL Datasheet - Page 4

• Manufacturer Part Number: MCP6024-E/SL
• Description: IC OPAMP QUAD 2.5V 10MHZ 14SOIC
• Manufacturer: Microchip Technology

Specifications of MCP6024-E/SL

• Slew Rate: 7 V/µs
• Package / Case: 14-SOIC (3.9mm Width), 14-SOL
• Amplifier Type: General Purpose
• Number Of Circuits: 4
• Output Type: Rail-to-Rail
• Gain Bandwidth Product: 10MHz
• Current - Input Bias: 1pA
• Voltage - Input Offset: 500µV
• Current - Supply: 1mA
• Current - Output / Channel: 30mA
• Voltage - Supply, Single/dual (±): 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Number Of Channels: 4
• Common Mode Rejection Ratio (min): 70 dB
• Input Offset Voltage: 0.25 mV
• Input Bias Current (max): 5000 pA
• Operating Supply Voltage: 3 V, 5 V
• Supply Current: 5.4 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Shutdown: No
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.5 V
• Technology: CMOS
• Voltage Gain Db: 110 dB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MCP6021/1R/2/3/4
AC ELECTRICAL CHARACTERISTICS
MCP6023 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
DS21685D-page 4
Electrical Specifications: Unless otherwise indicated, T
V
Power Supply
Supply Voltage
Quiescent Current per Amplifier
AC Response
Gain Bandwidth Product
Phase Margin
Settling Time, 0.2%
Slew Rate
Total Harmonic Distortion Plus Noise
f = 1 kHz, G = +1 V/V
f = 1 kHz, G = +1 V/V, R
f = 1 kHz, G = +1 V/V
f = 1 kHz, G = +10 V/V
f = 1 kHz, G = +100 V/V
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Specifications: Unless otherwise indicated, T
V
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
Amplifier Output Leakage
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z Time
Hysteresis
OUT
OUT
≈ V
≈ V
DD
DD
Parameters
/2, R
/2, R
Parameters
L
L
= 10 kΩ to V
= 10 kΩ to V
L
= 600Ω
DD
DD
/2 and C
/2 and C
t
THD+N
THD+N
THD+N
THD+N
THD+N
GBWP
SETTLE
Sym
V
PM
SR
E
e
I
i
DD
ni
Q
ni
ni
L
L
= 60 pF.
= 60 pF.
I
O(LEAK)
V
Sym
I
t
I
V
CSH
t
HYST
V
CSL
I
OFF
Min
ON
2.5
0.5
SS
—
—
—
—
—
—
—
—
—
—
—
—
IH
IL
0.8 V
0.00053
0.00064
A
A
0.0014
0.0009
0.005
V
-1.0
Min
Typ
= +25°C, V
250
= +25°C, V
—
—
—
—
—
1.0
7.0
2.9
8.7
-2
10
65
—
SS
3
DD
-0.05
0.01
0.01
0.01
0.01
Typ
0.6
—
—
2
Max
1.35
5.5
—
—
—
—
—
—
—
—
—
—
—
—
DD
DD
= +2.5V to +5.5V, V
= +2.5V to +5.5V, V
0.2 V
V
Max
2.0
10
—
—
—
—
—
nV/√Hz f = 10 kHz
DD
fA/√Hz f = 1 kHz
µVp-p
Units
MHz
V/µs
mA
DD
ns
%
%
%
%
%
V
°
Units
µA
µA
µA
µA
µs
µs
V
V
V
I
G = +1 V/V
G = +1 V/V, V
V
V
V
V
V
V
V
f = 0.1 Hz to 10 Hz
O
OUT
DD
OUT
DD
OUT
OUT
OUT
= 0
= 5.0V, BW = 22 kHz
= 5.0V, BW = 22 kHz
CS = V
CS = V
CS = V
CS = V
G = +1, V
CS = 0.2V
G = +1, V
CS = 0.8V
V
= 0.25V to 3.25V (1.75V ± 1.50V
= 0.25V to 3.25V (1.75V ± 1.50V
= 4V
= 4V
= 4V
SS
SS
DD
= GND, V
= GND, V
= 5.0V, Internal Switch
P-P
P-P
P-P
© 2009 Microchip Technology Inc.
SS
DD
DD
DD
, V
, V
, V
OUT
IN
IN
DD
DD
DD
DD
DD
Conditions
= V
= V
= 100 mV
to V
to V
Conditions
CM
CM
= 5.0V, BW = 22 kHz
= 5.0V, BW = 22 kHz
= 5.0V, BW = 22 kHz
SS
SS
= V
= V
OUT
OUT
,
,
DD
DD
= 0.45V
= 0.05V
p-p
/2,
/2,
DD
DD
time
time
PK
PK
),
),