TL082CMX/NOPB National Semiconductor, TL082CMX/NOPB Datasheet - Page 3

• Manufacturer Part Number: TL082CMX/NOPB
• Description: IC OP AMP WIDEBAND JFET 8-SOIC
• Manufacturer: National Semiconductor
• Series: BI-FET II™r

Specifications of TL082CMX/NOPB

• Amplifier Type: J-FET
• Number Of Circuits: 2
• Slew Rate: 13 V/µs
• Gain Bandwidth Product: 4MHz
• Current - Input Bias: 50pA
• Voltage - Input Offset: 5000µV
• Current - Supply: 3.6mA
• Voltage - Supply, Single/dual (±): 10 V ~ 30 V, ±5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Other names: TL082CMX/NOPBTR

SR
GBW
e
i
THD
n
n
AC Electrical Characteristics
Symbol
Note 2: For operating at elevated temperature, the device must be derated based on a thermal resistance of 115˚C/W junction to ambient for the N package.
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4: The power dissipation limit, however, cannot be exceeded.
Note 5: These specifications apply for V
Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P
recommended if input bias current is to be kept to a minimum.
Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. V
=
Typical Performance Characteristics
±
6V to
±
15V.
Amplifier to Amplifier Coupling
Slew Rate
Gain Bandwidth Product
Equivalent Input Noise Voltage
Equivalent Input Noise Current
Total Harmonic Distortion
Input Bias Current
Parameter
S
=
±
15V and 0˚C ≤T
D
. T
00835718
j
= T
(Note 5)
A
≤ +70˚C. V
A
T
20 kHz (Input Referred)
V
V
T
f = 1000 Hz
T
A
V
BW = 20 Hz−20 kHz
+ θ
A
S
S
A
j
V
O
= 25˚C, f = 1000 Hz
jA
= 25˚C, f = 1Hz-
= 25˚C, R
=
=
= +10, R
= 20 Vp − p,
P
±
±
D
OS
15V, T
15V, T
where θ
, I
Conditions
B
3
and I
L
S
A
A
= 10k,
jA
= 100Ω,
= 25˚C
= 25˚C
OS
is the thermal resistance from junction to ambient. Use of a heat sink is
are measured at V
CM
Input Bias Current
Min
8
= 0.
TL082C
<
−120
0.01
Typ
13
25
0.02
4
Max
00835719
j
. Due to the limited
www.national.com
nV/
pA/
Units
V/µs
MHz
dB
%
√
√
Hz
Hz
S